FDPF12N35

FDPF12N35 Datasheet


FDP12N35 / FDPF12N35 350V N-Channel MOSFET

Part Datasheet
FDPF12N35 FDPF12N35 FDPF12N35 (pdf)
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FDP12N35 / FDPF12N35 350V N-Channel MOSFET

FDP12N35 / FDPF12N35
350V N-Channel MOSFET
• 12A, 350V, RDS on = = 10 V
• Low gate charge typical 18 nC
• Low Crss typical 15 pF
• Fast switching
• Improved dv/dt capability

April 2007

UniFETTM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

TO-220

FDP Series

TO-220F

FDPF Series

Absolute Maximum Ratings

Parameter

VDSS ID

Drain-Source Voltage

Drain Current Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C
- Pulsed

Note 1

VGSS EAS IAR EAR dv/dt

Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt

Note 2 Note 1 Note 1 Note 3

Power Dissipation TC = 25°C
- Derate above 25°C

TJ, TSTG TL

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature

Thermal Characteristics

FDP12N35 FDPF12N35
± 30
-55 to +150

Parameter

Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient

FDP12N35

FDPF12N35

Unit

V A V mJ A mJ V/ns W/°C °C

Unit
°C/W °C/W °C/W
2007 Fairchild Semiconductor Corporation
Package Marking and Ordering Information

Device Marking

FDP12N35 FDPF12N35

Device

FDP12N35 FDPF12N35

Package

TO-220 TO-220F

Reel Size

Tape Width

Quantity

Electrical Characteristics TC = 25°C unless otherwise noted

Parameter

Conditions

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250uA, TJ = 25°C

Breakdown Voltage Temperature Coefficient

ID = 250uA, Referenced to 25°C

IDSS

Zero Gate Voltage Drain Current

VDS = 350V, VGS = 0V

VDS = 280V, TC = 125°C

IGSSF

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V

IGSSR

On Characteristics

VGS th

Gate Threshold Voltage

VDS = VGS, ID = 250uA

RDS on

Static Drain-Source On-Resistance

VGS = 10V, ID = 6A

Forward Transconductance

Dynamic Characteristics

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Switching Characteristics
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Datasheet ID: FDPF12N35 514263