FMBS549

FMBS549 Datasheet

FMBS549

Part	Datasheet
FMBS549	FMBS549 (pdf)

PDF Datasheet Preview
FMBS549 FMBS549 NC C E B C Pin 1 Package SuperSOT-6 single Mark .S1 PNP Low Saturation Transistor ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continous. Sourced from process PB. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current- Continuous - Peak Pulse Current Operating and Storage Junction Temperature Range Value 30 1 2 -55 to +150 These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150°C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Units V A °C Thermal Characteristics TA = 25°C unless otherwise noted Symbol PD Total Device Dissipation Characteristics Thermal Resistance, Junction to Ambient, total *Device mounted on a 1 in2 pad of 2 oz copper. Units °C/W 1999 Fairchild Semiconductor FMBS549 PNP Low Saturation transistor continued Electrical Characteristics TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO Collector to Emitter Voltage BVCBO

PDF Datasheet Preview

FMBS549

FMBS549

NC C E

B C Pin 1

Package SuperSOT-6 single Mark .S1

PNP Low Saturation Transistor

ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continous. Sourced from process PB.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol VCEO VCBO VEBO IC

TJ, TSTG

Parameter Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current- Continuous - Peak Pulse Current

Operating and Storage Junction Temperature Range

Value 30
1 2 -55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150°C.
2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Units V

A °C

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol PD

Total Device Dissipation*

Characteristics

Thermal Resistance, Junction to Ambient, total *Device mounted on a 1 in2 pad of 2 oz copper.

Units
°C/W
1999 Fairchild Semiconductor

FMBS549

PNP Low Saturation transistor
continued

Electrical Characteristics TA = 25°C unless otherwise noted

Parameter

Test Conditions

Min Max Units

OFF CHARACTERISTICS

BVCEO

Collector to Emitter Voltage

BVCBO

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FMBS549 Datasheet file may be downloaded here without warranties.

Datasheet ID: FMBS549 514887