FJNS4203RBU

FJNS4203RBU Datasheet

FJNS4203R

Part	Datasheet
FJNS4203RBU	FJNS4203RBU (pdf)

Related Parts	Information
FJNS4203RTA	FJNS4203RTA

PDF Datasheet Preview
FJNS4203R FJNS4203R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor • Complement to FJNS3203R TO-92S 1.Emitter Collector Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter Value Units VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature -100 -55 ~ 150 Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO ICBO hFE VCE sat fT Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -5mA IC= -10mA, IB= -0.5mA VCE= -10V, IC= -5mA VCB= -10V, IE=0 f=1.0MHz VI off VI on R1/R2 Input Off Voltage Input On Voltage Input Resistor Ratio VCE= -5V, IC= -100µA VCE= -0.3V, IC= -5mA Min. -50 -50 56 Equivalent Circuit Typ. Max. Units V µA V MHz pF V 2002 Fairchild Semiconductor Corporation FJNS4203R Typical Characteristics -1000 -100 -100 VCE = - 5V R1 = 22K R2 = 22K VCE = - 0.3V R1 = 22 K R2 = 22 K VI on [V], INPUT VOLTAGE hFE, DC CURRENT GAIN IC [µA], COLLECTOR CURRENT -10 -1 -100 -1000

PDF Datasheet Preview

FJNS4203R

FJNS4203R

Switching Application Bias Resistor Built In
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor
• Complement to FJNS3203R

TO-92S
1.Emitter Collector Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

Value

Units

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature
-100
-55 ~ 150

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO ICBO hFE VCE sat fT Cob

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance

IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -5mA IC= -10mA, IB= -0.5mA VCE= -10V, IC= -5mA VCB= -10V, IE=0 f=1.0MHz

VI off VI on R1/R2

Input Off Voltage Input On Voltage Input Resistor Ratio

VCE= -5V, IC= -100µA VCE= -0.3V, IC= -5mA

Min. -50 -50 56

Equivalent Circuit

Typ. Max.

Units V µA V

MHz pF V
2002 Fairchild Semiconductor Corporation

FJNS4203R

Typical Characteristics
-1000 -100
-100 VCE = - 5V R1 = 22K R2 = 22K

VCE = - 0.3V R1 = 22 K R2 = 22 K

VI on [V], INPUT VOLTAGE
hFE, DC CURRENT GAIN

IC [µA], COLLECTOR CURRENT
-10 -1
-100
-1000

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Datasheet ID: FJNS4203RBU 514768