FKN08PN60S
FKN08PN60S Datasheet
FKN08PN60 TRIAC Silicon Bidirectional Thyristor
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FKN08PN60S |
FKN08PN60S (pdf) |
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FKN08PN60 |
FKN08PN60 |
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| FKN08PN60 TRIAC Silicon Bidirectional Thyristor FKN08PN60 TRIAC Silicon Bidirectional Thyristor Application Explanation • Switching mode power supply, light dimmer, electric flasher unit, hair drier • TV sets, stereo, refrigerator, washing machine • Electric blanket, solenoid driver, small motor control • Photo copier, electric tool August 2006 TO-92 1 T1 2 Gate 3 T2 2 1 Absolute Maximum Ratings Ta = 25°C unless otherwise noted VDRM VRRM IT RMS Parameter Value Peak Repetitive Off-State Voltage Sine Wave 50 to 60Hz, Gate Open RMS On-State Current Commercial frequency, sine full wave 360q conduction, Tc= ITSM I2t Surge On-State Current I2t for Fusing Sinewave 1 full cycle, peak value, non-repetitive 50Hz 60Hz Value corresponding to 1 cycle of halfwave, surge on-state current, tp=8.4ms PGM PG AV VGM IGM TJ TSTG Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Thermal Characteristics RTJC RTJA Parameter Thermal Resistance, Junction to Case note1 Thermal Resistance, Junction to Ambient note2 Note1 Infinite cooling condition. Note2 JESD51-10 Test Borad FR4 Minimum land pad Rating 5 1 - 40 ~ 125 - 40 ~ 125 Value 40 160 Units A A2s W V A qC Units qC/W qC/W 2006 Fairchild Semiconductor Corporation FKN08PN60 TRIAC Silicon Bidirectional Thyristor Electrical Characteristics TC = 25°C unless otherwise noted Parameter Package Marking and Ordering Information Device Marking K08PN60 Device FKN08PN60 Package TO-92 Packing Bulk Tape Width Quantity FKN08PN60 TRIAC Silicon Bidirectional Thyristor Typical Performance Characteristics Figure On-State Characteristics Figure Power Dissipation P [W], Maximum Average Power Dissipation AV I [A], On-State Current T =125 oC J T =25 oC J V [V], On-State Voltage TM DC 180oC 120oC 90oC 60oC 30oC IT [A], On-State Current RMS Figure RMS Current Rating Maximum Allowable Case Temperature, T [oC] C 30oC 60oC 90oC 120oC 180oC IT [A], On-State Current RMS Figure5. Typical Gate Voltage vs Junction Temperarure V [mA], Gate Trigger Voltage GT Q3 Q1 T [oC], Junction Temperature J Figure Typical Gate Trigger Current vs Junction Temperature I [mA], Gate Trigger Current T [oC], Junction Temperature J Figure6. Typical Latching Currrent vs Junction Temperature V [mA], Gate Trigger Voltage GT T [oC], Junction Temperature J |
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