FJZ733GTF

FJZ733GTF Datasheet

FJZ733

Part	Datasheet
FJZ733GTF	FJZ733GTF (pdf)

Related Parts	Information
FJZ733YTF	FJZ733YTF
FJZ733RTF	FJZ733RTF
FJZ733LTF	FJZ733LTF
FJZ733OTF	FJZ733OTF

PDF Datasheet Preview
FJZ733 FJZ733 Low Frequency Amplifier • Collector-Base Voltage VCBO= -60V • Complement to FJZ945 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO IEBO hFE VCE sat VBE on fT Cob NF Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure IC= -100µA, IE=0 IC= -10mA. IB=0 IE = -10µA. IC=0 VCB= --60V, IE=0 VEB= -5V, IC=0 VCE= -6V, IC= -1mA IC= -100mA, IB= -10mA VCE= -6V, IC= -1mA VCE= -6V, IC= -10mA VCB= -10V, IE = 0, f=1MHz VCE= -6V, IC= -0.3mA f=1MHz, Thermal Characteristics TC=25°C unless otherwise noted Parameter Thermal Resistance, Junction to Ambient hFE Classification & Marking Classification hFE Marking 40 ~ 80 A2 70 ~ 140 A3 120 ~ 240 A1 Marking 2 1 SOT-623F Base Emitter Collector Ratings -60 -50 -5 -150 100 150 -55 ~ 150 Units V mA mW °C °C Min. -60 -50 -5 Typ. Max. -100 -100 700 Units V nA V MHz pF dB Max. 1250 G 200 ~ 400 Units °C/W L 350 ~ 700

PDF Datasheet Preview

FJZ733

FJZ733

Low Frequency Amplifier
• Collector-Base Voltage VCBO= -60V
• Complement to FJZ945

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO BVEBO ICBO IEBO hFE VCE sat VBE on fT Cob NF

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure

IC= -100µA, IE=0 IC= -10mA. IB=0 IE = -10µA. IC=0 VCB= --60V, IE=0 VEB= -5V, IC=0 VCE= -6V, IC= -1mA IC= -100mA, IB= -10mA VCE= -6V, IC= -1mA VCE= -6V, IC= -10mA VCB= -10V, IE = 0, f=1MHz VCE= -6V, IC= -0.3mA f=1MHz,

Thermal Characteristics TC=25°C unless otherwise noted

Parameter

Thermal Resistance, Junction to Ambient
hFE Classification & Marking

Classification
hFE Marking
40 ~ 80 A2
70 ~ 140 A3
120 ~ 240 A1

Marking
2 1 SOT-623F Base Emitter Collector

Ratings -60 -50 -5 -150 100 150
-55 ~ 150

Units V mA
mW °C °C

Min. -60 -50 -5

Typ.

Max.
-100 -100 700

Units V nA

V MHz pF dB

Max. 1250

G 200 ~ 400

Units °C/W

L 350 ~ 700

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Datasheet ID: FJZ733GTF 514862