FDZ2554PZ

FDZ2554PZ Datasheet

FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified Power BGA MOSFET

Part	Datasheet
FDZ2554PZ	FDZ2554PZ (pdf)

Related Parts	Information
FDZ2554P	FDZ2554P

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FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified Power BGA MOSFET June 2007 FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified Power BGA MOSFET -20V, -6.5A, - Max rDS on = at VGS = -4.5V, ID = -6.5A - Max rDS on = at VGS = -2.5V, ID = -5A - Occupies only cm2 of PCB area 1/3 the area of SO-8 - Ultra-thin package less than mm height when mounted to PCB - Outstanding thermal transfer characteristics significantly better than SO-8 - Ultra-low Qg x rDS on figure-of-merit - High power and current handling capability - RoHS Compliant Combining Fairchild’s advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2554P minimizes both PCB space and rDS on . This monolithic common drain BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low rDS on . - Battery management - Load Switch - Battery protection Bottom MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Steady State Operating and Storage Junction Temperature Range Thermal Characteristics Note 1a Note 1a Ratings -20 ±12 -20 -55 to +150 Units V W °C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ball Package Marking and Ordering Information Note 1 Note 1a Note 1b Note 1 °C/W Device Marking 2554P Device FDZ2554P Package BGA 2.5X4.0 Reel Size 7’’ Tape Width 12 mm Quantity 3000 units 2007 Fairchild Semiconductor Corporation FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified BGA MOSFET Electrical Characteristics TJ= 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250µA, VGS = 0V ID = -250µA, referenced to 25°C VDS = -16V, VGS = 0V VGS = ±12V, VDS = 0V mV/°C ±100 nA On Characteristics VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = -250µA ID = -250µA, referenced to 25°C mV/°C VGS = -4.5V, ID = -6.5A VGS = -2.5V, ID = -5A VGS = -4.5V, ID = -6.5A, TJ = 125°C VDD = -5V, ID = -6.5A Dynamic Characteristics Ciss Coss Crss Rg

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FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified Power BGA MOSFET

June 2007

FDZ2554P

Monolithic Common Drain P-Channel 2.5V Specified Power BGA MOSFET -20V, -6.5A,
- Max rDS on = at VGS = -4.5V, ID = -6.5A - Max rDS on = at VGS = -2.5V, ID = -5A - Occupies only cm2 of PCB area 1/3 the area of SO-8
- Ultra-thin package less than mm height when mounted to PCB
- Outstanding thermal transfer characteristics significantly better than SO-8
- Ultra-low Qg x rDS on figure-of-merit - High power and current handling capability
- RoHS Compliant

Combining Fairchild’s advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2554P minimizes both PCB space and rDS on . This monolithic common drain BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low rDS on .
- Battery management
- Load Switch
- Battery protection

Bottom

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

Symbol VDS VGS

PD TJ, TSTG

Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous
-Pulsed Power Dissipation Steady State Operating and Storage Junction Temperature Range

Thermal Characteristics

Note 1a Note 1a

Ratings -20 ±12 -20
-55 to +150

Units V

W °C

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ball
Package Marking and Ordering Information

Note 1

Note 1a

Note 1b

Note 1
°C/W

Device Marking 2554P

Device FDZ2554P

Package BGA 2.5X4.0

Reel Size 7’’

Tape Width 12 mm

Quantity 3000 units
2007 Fairchild Semiconductor Corporation

FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified BGA MOSFET

Electrical Characteristics TJ= 25°C unless otherwise noted

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

IDSS

IGSS

Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current

ID = -250µA, VGS = 0V

ID = -250µA, referenced to 25°C

VDS = -16V, VGS = 0V VGS = ±12V, VDS = 0V
mV/°C
±100 nA

On Characteristics

VGS th

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage Temperature Coefficient
rDS on

Static Drain to Source On Resistance

Forward Transconductance

VGS = VDS, ID = -250µA

ID = -250µA, referenced to 25°C
mV/°C

VGS = -4.5V, ID = -6.5A VGS = -2.5V, ID = -5A VGS = -4.5V, ID = -6.5A, TJ = 125°C VDD = -5V, ID = -6.5A

Dynamic Characteristics

Ciss Coss Crss Rg

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Datasheet ID: FDZ2554PZ 514445