FJY3005R
FJY3005R Datasheet
FJY3005R NPN Epitaxial Silicon Transistor
| Part | Datasheet |
|---|---|
FJY3005R |
FJY3005R (pdf) |
| PDF Datasheet Preview |
|---|
| FJY3005R NPN Epitaxial Silicon Transistor FJY3005R NPN Epitaxial Silicon Transistor • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor • Complement to FJY4005R July 2007 E B SOT - 523F Equivalent Circuit Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current TSTG Storage Temperature Range Junction Temperature Collector Power Dissipation, by * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Value 50 10 100 -55~150 200 Thermal Characteristics* Ta=25°C unless otherwise noted Parameter Thermal Resistance, Junction to Ambient * Minimum land pad size. Electrical Characteristics* TC = 25°C unless otherwise noted Parameter Test Condition V BR CBO Collector-Emitter Breakdown Voltage IC = 10 uA, IE = 0 V BR CEO Collector-Base Breakdown Voltage IC = 100 uA, IB = 0 ICBO Collector-Cutoff Current VCB = 40 V, IE = 0 DC Current Gain VCE = 5 V, IC = 5 mA VCE sat |
| More datasheets: 4335 | 4337 | 4332 | 4331 | 4336 | 4333 | 4354 | 4356 | 80006 SL005 | FDM606P |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FJY3005R Datasheet file may be downloaded here without warranties.