FDM606P
FDM606P Datasheet
FDM606P
| Part | Datasheet |
|---|---|
FDM606P |
FDM606P (pdf) |
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| FDM606P December 2004 FDM606P P-Channel 1.8V Logic Level Power MOSFET This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. • Load switch • Battery charge • Battery disconnect circuits • Fast switching • rDS ON = Typ , VGS = -4.5V • rDS ON = Typ , VGS = -2.5V • rDS ON = Typ , VGS = -1.8V MicroFET 3x2-8 MOSFET Maximum Ratings TA=25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC = 25oC, VGS = - 4.5V Continuous TC = 100oC, VGS = - 2.5V Continuous TC = 100oC, VGS = -1.8V Pulsed Power dissipation Derate above 25°C TJ, TSTG Operating and Storage Temperature Thermal Characteristics Thermal Resistance Junction to Case Note1 Thermal Resistance Junction to Ambient Note 2 Thermal Resistance Junction to Ambient Note 3 Package Marking and Ordering Information Device Marking .06P Device FDM606P Package MicroFET3x2 Reel Size 178 mm Ratings -20 ±8 Figure 4 -55 to 150 Units V W mW/oC oC/W oC/W oC/W Tape Width 8 mm Quantity 3000 2004 Fairchild Semiconductor Corporation FDM606P Electrical Characteristics TA = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = -250µA, VGS = 0V VDS = -16V VGS = 0V TA= 100oC VGS = ±8V On Characteristics VGS TH Gate to Source Threshold Voltage VGS = VDS, ID = -250µA ID = -6.8A, VGS = -4.5V rDS ON Drain to Source On Resistance ID = -3.8A, VGS = -2.5V ID = -3.0A, VGS = -1.8V Dynamic Characteristics CISS COSS CRSS Qg TOT Qg -2.5 Qgs Qgd VDS = -10V, VGS = 0V, f = 1MHz VGS = 0V to -4.5V VGS = 0V to -2.5V |
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