FJX4010RTF

FJX4010RTF Datasheet


FJX4010R

Part Datasheet
FJX4010RTF FJX4010RTF FJX4010RTF (pdf)
PDF Datasheet Preview
FJX4010R

FJX4010R

Switching Application Bias Resistor Built In
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor
• Complement to FJX3010R

Marking
2 1 SOT-323 Base Emitter Collector Equivalent Circuit

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO ICBO hFE VCE sat Cob

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance

IC= -100µA, IE=0 IE= -1mA, IB=0 VCB= -30V, IE=0 VCE= -5V, IC= -1mA IC= -10mA, IB= -1mA VCB= -10V, IE=0 f=1MHz

Current Gain Bandwidth Product

VCE= -10V, IC= -5mA

Input Resistor

Value -40 -40 -5 -100 200 150
-55 ~ 150

Units V mA
mW °C °C

Min. -40 -40 100

Typ.
200 10

Max.

Units V µA
2002 Fairchild Semiconductor Corporation

FJX4010R

Typical Characteristics
hFE, DC CURRENT GAIN

VCE = - 5V R = 10K
-100

IC[mA], COLLECTOR CURRENT

Figure DC current Gain
280 240 200 160 120
80 40

Ta[oC], AMBIENT TEMPERATURE

Figure Power Derating
More datasheets: T89C51CC02UA-TDSIM | T89C51CC02UA-SISIM | T89C51CC02UA-TISIM | T89C51CC02CA-RATIM | T89C51CC02CA-SISIM | T89C51CC02CA-6KSIM | T89C51CC02UA-SITIM | T89C51CC02UA-6KSIM | 2548 | B88069X6561B502


Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FJX4010RTF Datasheet file may be downloaded here without warranties.

Datasheet ID: FJX4010RTF 514826