FJX3015RTF
FJX3015RTF Datasheet
FJX3015R
| Part | Datasheet |
|---|---|
FJX3015RTF |
FJX3015RTF (pdf) |
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| FJX3015R FJX3015R Switching Application Bias Resistor Built In 3 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor Marking NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO ICBO hFE VCE sat fT Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance IC=10µA, IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=10mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA VCB=10V, IE=0 f=1.0MHz VI off VI on R1/R2 Input Off Voltage Input On Voltage Input Resistor Ratio VCE=5V, VCE=0.3V, IC=20mA 1 SOT-323 Base Emitter Collector Equivalent Circuit C Value 50 10 100 200 150 -55 ~ 150 Units V mA mW °C °C Min. 50 33 Typ. Max. Units V µA 2002 Fairchild Semiconductor Corporation FJX3015R Typical Characteristics 1000 VCE = 5V R1 = 2.2K R2 = 10K VCE = 5V R1 = 2.2K R2 = 10K VI on [V], INPUT VOLTAGE hFE, DC CURRENT GAIN IC [µA], COLLECTOR CURRENT 1000 IC[mA], COLLECTOR CURRENT Figure DC current Gain VCE = 5V |
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