FJX3006RTF
FJX3006RTF Datasheet
FJX3006R
| Part | Datasheet |
|---|---|
FJX3006RTF |
FJX3006RTF (pdf) |
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| FJX3006R FJX3006R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor • Complement to FJX4006R Marking 2 1 SOT-323 Base Emitter Collector Equivalent Circuit NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO ICBO hFE VCE sat Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance IC=10µA, IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=5mA IC=10mA, IB=0.5mA VCE=10mA, IE=0 f=1.0MHz fT VI off VI on R1/R2 Current Gain Bandwidth Product Input Off Voltage Input On Voltage Input Resistor Ratio VCB=10V, IC=5mA VCE=5V, IC=100µA VCE=0.3V, IC=1mA Value 50 10 100 200 150 -55 ~ 150 Units V mA mW °C °C Min. 50 68 Typ. 250 10 Max. Units V µA 2002 Fairchild Semiconductor Corporation FJX3006R Typical Characteristics hFE, DC CURRENT GAIN 1000 100 VCE = 5V R1 = 10K R2 = 47K IC[mA], COLLECTOR CURRENT Figure DC current Gain VCE = 5V R = 10K R = 47K 2 VI off [V], INPUT OFF VOLTAGE Figure Input Off Voltage |
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