FJV4109RMTF
FJV4109RMTF Datasheet
FJV4109R
| Part | Datasheet |
|---|---|
FJV4109RMTF |
FJV4109RMTF (pdf) |
| PDF Datasheet Preview |
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| FJV4109R FJV4109R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor • Complement to FJV3109R Marking PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO ICBO hFE VCE sat Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance IC= -100µA, IE=0 IC= -1mA, IB=0 VCB= -30V, IE=0 VCE= -5V, IC= -1mA IC= -10mA, IB= -1mA VCB= -10V, IE=0 f=1MHz Current Gain Bandwidth Product VCE= -10V, IC= -5mA Input Resistor 2 1 SOT-23 Base Emitter Collector Equivalent Circuit C Value -40 -40 -5 -100 200 150 -55 ~ 150 Units V mA mW °C °C Min. -40 -40 100 Typ. Max. Units V µA 2002 Fairchild Semiconductor Corporation FJV4109R Typical Characteristics hFE, DC CURRENT GAIN VCE = - 5V R = 4.7K -100 IC[mA], COLLECTOR CURRENT Figure DC current Gain 400 350 300 250 200 150 100 Ta[oC], AMBIENT TEMPERATURE Figure Power Derating PC[mW], POWER DISSIPATION |
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