FJV4109RMTF

FJV4109RMTF Datasheet


FJV4109R

Part Datasheet
FJV4109RMTF FJV4109RMTF FJV4109RMTF (pdf)
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FJV4109R

FJV4109R

Switching Application Bias Resistor Built In
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor
• Complement to FJV3109R

Marking

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO ICBO hFE VCE sat Cob

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance

IC= -100µA, IE=0 IC= -1mA, IB=0 VCB= -30V, IE=0 VCE= -5V, IC= -1mA IC= -10mA, IB= -1mA VCB= -10V, IE=0 f=1MHz

Current Gain Bandwidth Product

VCE= -10V, IC= -5mA

Input Resistor
2 1 SOT-23 Base Emitter Collector

Equivalent Circuit C

Value -40 -40 -5 -100 200 150
-55 ~ 150

Units V mA
mW °C °C

Min. -40 -40 100

Typ.

Max.

Units V µA
2002 Fairchild Semiconductor Corporation

FJV4109R

Typical Characteristics
hFE, DC CURRENT GAIN

VCE = - 5V R = 4.7K
-100

IC[mA], COLLECTOR CURRENT

Figure DC current Gain
400 350 300 250 200 150 100

Ta[oC], AMBIENT TEMPERATURE

Figure Power Derating

PC[mW], POWER DISSIPATION
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Datasheet ID: FJV4109RMTF 514803