FJV4107RMTF

FJV4107RMTF Datasheet


FJV4107R

Part Datasheet
FJV4107RMTF FJV4107RMTF FJV4107RMTF (pdf)
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FJV4107R

FJV4107R

Switching Application Bias Resistor Built In
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor
• Complement to FJV3107R

Marking

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO ICBO hFE VCE sat Cob

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance

IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -5mA IC= -10mA, IB= -0.5mA VCB= -10V, IE=0 f=1MHz
fT VI off VI on R1/R2

Current Gain-Bandwidth Product Input Off Voltage Input On Voltage Input Resistor Ratio

VCE= -10V, IC= -5mA VCE= -5V, IC= -100µA VCE= -0.3V, IC= -2mA
2 1 SOT-23 Base Emitter Collector

Equivalent Circuit C

Value -50 -50 -10 -100 200 150
-55 ~ 150

Units V mA
mW °C °C

Min. -50 -50 68

Typ.
200 22

Max.

Units V µA
2002 Fairchild Semiconductor Corporation

FJV4107R

Typical Characteristics
hFE, DC CURRENT GAIN
1000 100

VCE = - 5V R1 = 22K R2 = 47K
-100

IC[mA], COLLECTOR CURRENT

Figure DC current Gain
-10k

V = - 5V CE
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Datasheet ID: FJV4107RMTF 514801