FJV4107RMTF
FJV4107RMTF Datasheet
FJV4107R
| Part | Datasheet |
|---|---|
FJV4107RMTF |
FJV4107RMTF (pdf) |
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| FJV4107R FJV4107R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor • Complement to FJV3107R Marking PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO ICBO hFE VCE sat Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -5mA IC= -10mA, IB= -0.5mA VCB= -10V, IE=0 f=1MHz fT VI off VI on R1/R2 Current Gain-Bandwidth Product Input Off Voltage Input On Voltage Input Resistor Ratio VCE= -10V, IC= -5mA VCE= -5V, IC= -100µA VCE= -0.3V, IC= -2mA 2 1 SOT-23 Base Emitter Collector Equivalent Circuit C Value -50 -50 -10 -100 200 150 -55 ~ 150 Units V mA mW °C °C Min. -50 -50 68 Typ. 200 22 Max. Units V µA 2002 Fairchild Semiconductor Corporation FJV4107R Typical Characteristics hFE, DC CURRENT GAIN 1000 100 VCE = - 5V R1 = 22K R2 = 47K -100 IC[mA], COLLECTOR CURRENT Figure DC current Gain -10k V = - 5V CE |
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