FJV3111RMTF

FJV3111RMTF Datasheet


FJV3111R

Part Datasheet
FJV3111RMTF FJV3111RMTF FJV3111RMTF (pdf)
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FJV3111R

FJV3111R

Switching Application Bias Resistor Built In
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor
• Complement to FJV4111R

Marking
2 1 SOT-23 Base Emitter Collector Equivalent Circuit

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO ICBO hFE VCE sat Cob

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance

IC=100µA, IE=0 IE=1mA, IB=0 VCB=30V, IE=0 VCE=5V, IC=1mA IC=10mA, IB=1mA VCB=10V, IE=0 f=1MHz

Current Gain Bandwidth Product

VCE=10V, IC=5mA

Input Resistor

Value 40 5 100 200 150
-55 ~ 150

Units V mA
mW °C °C

Min. 40 100

Typ.
250 22

Max.

Units V µA
2002 Fairchild Semiconductor Corporation

FJV3111R

Package Dimensions

SOT-23
0.97REF
0.508REF
2002 Fairchild Semiconductor Corporation

Dimensions in Millimeters

TRADEMARKS

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ACEx

FACT
More datasheets: AK4359AEF | DA16-120EU | DA16-120UK | DA16-120US | 2861 | 9286006121506 | 9286004121506 | 9286002021106 | FDW6923 | ACS704ELC-015


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Datasheet ID: FJV3111RMTF 514796