FDW6923

FDW6923 Datasheet

FDW6923

Part	Datasheet
FDW6923	FDW6923 (pdf)

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FDW6923 July 2008 FDW6923 P-Channel 2.5V Specified MOSFET with Schottky Diode This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the MOSFET, providing a compact power solution for asynchronous DC/DC converter applications. • DC/DC conversion • A, V. RDS ON = VGS = V RDS ON = VGS = V • VF < V 1 A • High performance trench technology for extremely low RDS ON • Low profile TSSOP-8 package TSSOP-8 Pin 1 MOSFET Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Note 1 Pulsed MOSFET Power Dissipation minimum pad Note 1 Schottky Power Dissipation minimum pad Note 1 Operating and Storage Junction Temperature Range Ratings ± 12 -55 to +150 Schottky Maximum Ratings VRRM Average Forward Current Peak Forward Current Thermal Characteristics Thermal Resistance, Junction-to-Ambient minimum pad Note 1 MOSFET 115 Schottky 130 Package Marking and Ordering Information Device Marking Device Reel Size 6923 FDW6923 13’’ Tape width 16mm Units W °C °C/W Quantity 2500 units Fairchild Semiconductor International FDW6923 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR VGS = 0 V, ID = µA ID = µA, Referenced to25°C VDS = V, VGS = V, VGS = 12 V, VGS = 0 V VDS = 0 V VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static ID on Drain Current Forward Transconductance

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FDW6923

July 2008

FDW6923

P-Channel 2.5V Specified MOSFET with Schottky Diode

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the MOSFET, providing a compact power solution for asynchronous DC/DC converter applications.
• DC/DC conversion
• A, V. RDS ON = VGS = V RDS ON = VGS = V
• VF < V 1 A
• High performance trench technology for extremely low RDS ON
• Low profile TSSOP-8 package

TSSOP-8

Pin 1

MOSFET Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

PD TJ, TSTG

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current Continuous

Note 1

Pulsed

MOSFET Power Dissipation minimum pad Note 1 Schottky Power Dissipation minimum pad Note 1

Operating and Storage Junction Temperature Range

Ratings
± 12
-55 to +150

Schottky Maximum Ratings

VRRM

Average Forward Current

Peak Forward Current

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient
minimum pad

Note 1

MOSFET 115 Schottky 130
Package Marking and Ordering Information

Device Marking

Device

Reel Size
6923

FDW6923
13’’

Tape width 16mm

Units

W °C
°C/W

Quantity 2500 units

Fairchild Semiconductor International

FDW6923

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSSF

Leakage, Forward

IGSSR

VGS = 0 V, ID = µA

ID = µA, Referenced to25°C

VDS = V, VGS = V, VGS = 12 V,

VGS = 0 V VDS = 0 V VDS = 0 V

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

ID on

Drain Current

Forward Transconductance

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Datasheet ID: FDW6923 514429