FJP5200OTU

FJP5200OTU Datasheet


FJP5200 NPN Epitaxial Silicon Transistor

Part Datasheet
FJP5200OTU FJP5200OTU FJP5200OTU (pdf)
Related Parts Information
FJP5200RTU FJP5200RTU FJP5200RTU
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FJP5200 NPN Epitaxial Silicon Transistor

FJP5200 NPN Epitaxial Silicon Transistor
• High-Fidelity Audio Output Amplifier
• General Purpose Power Amplifier
• High Current Capability IC = 17A.
• High Power Dissipation 80watts.
• High Frequency 30MHz.
• High Voltage VCEO=250V
• Wide S.O.A for reliable operation.
• Excellent Gain Linearity for low THD.
• Complement to FJP1943
• Thermal and electrical Spice models are available.
• Same transistor is also available in:
-- TO264 package, 2SC5200/FJL4315 150 watts -- TO3P package, 2SC5242/FJA4313 130 watts -- TO220F package, FJPF5200 50 watts

Absolute Maximum Ratings* Ta = 25°C unless otherwise noted

Parameter

BVCBO BVCEO BVEBO IC IB PD

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Base Current Total Device Dissipation TC=25°C Derate above 25°C

TJ, TSTG

Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics* Ta=25°C unless otherwise noted

Parameter

Thermal Resistance, Junction to Case
* Device mounted on minimum pad size
hFE Classification

Classification
hFE1
55 ~ 110

January 2009
1.Base

TO-220 2.Collector 3.Emitter

Ratings
5 17 80 - 50 ~ +150

Units

V A W/°C °C

Max.

Units
°C/W
80 ~ 160
2009 Fairchild Semiconductor Corporation

FJP5200 NPN Epitaxial Silicon Transistor

Electrical Characteristics* Ta=25°C unless otherwise noted

Parameter

Test Condition

BVCBO

Collector-Base Breakdown Voltage

BVCEO

Collector-Emitter Breakdown Voltage

BVEBO
Ordering Information

FJP5200RTU FJP5200OTU

Marking

J5200R J5200O

Package

TO-220 TO-220

Packing Method

TUBE

Remarks
hFE1 R grade hFE1 O grade
2009 Fairchild Semiconductor Corporation

FJP5200 NPN Epitaxial Silicon Transistor

Typical Characteristics

IC[A], COLLECTOR CURRENT
hFE, DC CURRENT GAIN

IB=200mA

IB = 180mA

IB = 160mA

IB = 140mA

IB = 120mA

IB = 100mA

IB = 80mA

IB = 60mA

IB = 40mA

IB = 0
8 10 12 14 16 18 20

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure Static Characteristic

Tj=125oC Tj=25oC 100

Tj=-25oC

Vce=5V

Ic[A], COLLECTOR CURRENT

Figure DC current Gain O grade
10000

Ic=10Ib
1000

Tj=-25oC

Tj=25oC

Tj=125oC

Ic[A], COLLECTOR CURRENT

Figure Base-Emitter Saturation Voltage
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Datasheet ID: FJP5200OTU 514784