FJNS4213RBU

FJNS4213RBU Datasheet

FJNS4213R

Part	Datasheet
FJNS4213RBU	FJNS4213RBU (pdf)

Related Parts	Information
FJNS4213RTA	FJNS4213RTA

PDF Datasheet Preview
FJNS4213R FJNS4213R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor • Complement to FJNS3213R TO-92S 1.Emitter Collector Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter Value Units VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature -100 -55 ~ 150 Equivalent Circuit Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO ICBO hFE VCE sat fT Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -5mA IC= -10mA, IB= -0.5mA VCE= -10V, IC=-5mA VCB= -10V, IE=0 f=1.0MHz VI off VI on R1/R2 Input Off Voltage Input On Voltage Input Resistor Ratio VCE= -5V, IC= -100µA VCE= -0.2V, IC= -10mA Min. -50 -50 Typ. Max. Units V µA V MHz pF V 2002 Fairchild Semiconductor Corporation FJNS4213R Package Dimensions TO-92S MAX. 1.27TYP 1.27TYP 2002 Fairchild Semiconductor Corporation Dimensions in Millimeters TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

PDF Datasheet Preview

FJNS4213R

FJNS4213R

Switching Application Bias Resistor Built In
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor
• Complement to FJNS3213R

TO-92S
1.Emitter Collector Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

Value

Units

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature
-100
-55 ~ 150

Equivalent Circuit

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO ICBO hFE VCE sat fT Cob

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance

IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -5mA IC= -10mA, IB= -0.5mA VCE= -10V, IC=-5mA VCB= -10V, IE=0 f=1.0MHz

VI off VI on R1/R2

Input Off Voltage Input On Voltage Input Resistor Ratio

VCE= -5V, IC= -100µA VCE= -0.2V, IC= -10mA

Min. -50 -50

Typ.

Max.

Units V µA V

MHz pF V
2002 Fairchild Semiconductor Corporation

FJNS4213R

Package Dimensions

TO-92S

MAX.
1.27TYP
1.27TYP
2002 Fairchild Semiconductor Corporation

Dimensions in Millimeters

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FJNS4213RBU Datasheet file may be downloaded here without warranties.

Datasheet ID: FJNS4213RBU 514779