CRD-5FF0912P

CRD-5FF0912P Datasheet

CRD-5FF0912P SiC MOSFET High-Frequency Evaluation Board for 7L D2PAK

Part	Datasheet
CRD-5FF0912P	CRD-5FF0912P (pdf)

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CRD-5FF0912P SiC MOSFET High-Frequency Evaluation Board for 7L D2PAK User’s Manual This document is prepared as a user reference guide to install and operate CREE evaluation hardware. All parts of this document are provided in English, and the Cautions are provided in English, Mandarin, and Japanese. If the end user of this board is not fluent in any of these languages, it is your responsibility to ensure that they understand the terms and conditions described in this document, including without limitation the hazards of and safe operating conditions for this board. Note This Cree-designed evaluation hardware for Cree components is meant to be used as an evaluation tool in a lab setting and to be handled and operated by highly qualified technicians or engineers. The hardware is not designed to meet any particular safety standards and the tool is not a production qualified assembly. CAUTION DO NOT TOUCH THE BOARD WHEN IT IS ENERGIZED AND ALLOW THE BULK CAPACITORS TO COMPLETELY DISCHARGE PRIOR TO HANDLING THE BOARD. THERE CAN BE VERY HIGH VOLTAGES PRESENT ON THIS EVALUATION BOARD WHEN CONNECTED TO AN ELECTRICAL SOURCE, AND SOME COMPONENTS ON THIS BOARD CAN REACH TEMPERATURES ABOVE CELSIUS. FURTHER, THESE CONDITIONS WILL CONTINUE FOR A SHORT TIME AFTER THE ELECTRICAL SOURCE IS DISCONNECTED UNTIL THE BULK CAPACITORS ARE FULLY DISCHARGED. Please ensure that appropriate safety procedures are followed when operating this board, as any of the following can occur if you handle or use this board without following proper safety precautions: ● Death ● Serious injury ● Electrocution ● Electrical shock ● Electrical burns ● Severe heat burns You must read this document in its entirety before operating this board. It is not necessary for you to touch the board while it is energized. All test and measurement probes or attachments must be attached before the board is energized. You must never leave this board unattended or handle it when energized, and you must always ensure that all bulk capacitors have completely discharged prior to handling the board. Do not change the devices to be tested until the board is disconnected from the electrical source and the bulk capacitors have fully discharged. ● ● ● ● ● ● ● ● ● ● ● ● Introduction The purpose of this evaluation board is to demonstrate the high-switching performance of Cree 3rd Generation Silicon Carbide SiC Metal Oxide Semiconductor Field-Effect Transistors MOSFETs in a 7L D2PAK package. The new surface-mount device SMD , specifically designed for high voltage MOSFETs, has a small footprint with a wide creepage distance of 7mm between drain and source. The new package also includes a separate driver source connection, which reduces gate ringing and provides clean gate signals. This evaluation board Figure 1 comes configured as a basic half bridge circuit with two C3M0120090J SiC MOSFETs installed. The board can easily be configured into common power conversion topologies such as synchronous boost, synchronous buck, Inverter, and other topologies. This board was designed to make it easy for the user to: • Evaluate SiC MOSFET switching performance in a 7L D2PAK package to characterize EON and EOFF losses. • Evaluate thermal performance. The integrated heatsink is predrilled with a blind hole on the backside for thermocouples so the heatsink surface temperature can be accurately estimated. • Serve as a PC board layout example for driving Gen 3 SiC MOSFETs in the newly developed 7L D2PAK package. • Easily evaluate the effects of different Rg values, Miller clamps, uni-polar versus bipolar gate drive, fault detection circuit, various thermal interface materials, and cooling methods. Figure Evaluation Board top and side view The evaluation board’s physical dimensions are 127mm x 98mm x 58mm. The board comes preassembled with an isolated heatsink, cooling fan, and 2 SiC MOSFETS. The heatsink is attached to the board with five nonconductive screws RENY hexagon socket low head cap bolt M5 6mm . A block diagram of the evaluation board is shown in Figure Besides the two Cree 900V, C3M0120090 SiC MOSFETs Q1 and Q2 , there are two onboard isolated gate driver circuits to drive both Q1 and Q2. There are four power connectors CON1, CON2, CON3, and CON4 for connecting to the +DC link, -DC link, and midpoint. There is a 20 pin signal/supply voltage ribbon cable connector J10 onboard which carries the logic power, status signals, fault signals, and gate drive control signals. CON1 Gate Drive CON2 CON3, CON4 Figure Block Diagram Each gate drive circuit consists of a 2A isolated gate driver chip and a generous 2W isolated DC/DC converter that can comfortably switch the SiC MOSFETs at up to 3MHz. The driver chip provides 1200V of isolation between the low voltage control side and the high voltage drive side. The DC/DC converters are sourced with +12V on their inputs. Through a series of jumpers, JM1-JM6 Figure 4 , the gate drivers can each be configured as a low cost uni-polar +15V/0V gate drive or as a high performance bi-polar gate drive +15V/-3V . The DC/DC converters provide a maximum of 5.2kV of isolation for 60 seconds. The complete board assembly will withstand a 1.5kVAC.rms Hi-pot test for 60 seconds. +12V 3.3V +15V COM -3.3V DESAT CLAMP +15V 100 3.3V 8 J4 VEE 5.1K +12V J3 -3.3V 3.3V +15V COM -3.3V DESAT CLAMP

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CRD-5FF0912P SiC MOSFET High-Frequency Evaluation Board for 7L D2PAK

User’s Manual

This document is prepared as a user reference guide to install and operate CREE evaluation hardware. All parts of this document are provided in English, and the Cautions are provided in English, Mandarin, and Japanese. If the end user of this board is not fluent in any of these languages, it is your responsibility to ensure that they understand the terms and conditions described in this document, including without limitation the hazards of and safe operating conditions for this board.

Note This Cree-designed evaluation hardware for Cree components is meant to be used as an evaluation tool in a lab setting and to be handled and operated by highly qualified technicians or engineers. The hardware is not designed to meet any particular safety standards and the tool is not a production qualified assembly.

CAUTION

DO NOT TOUCH THE BOARD WHEN IT IS ENERGIZED AND ALLOW THE BULK CAPACITORS TO COMPLETELY DISCHARGE PRIOR TO HANDLING THE BOARD. THERE CAN BE VERY HIGH VOLTAGES PRESENT ON THIS EVALUATION BOARD WHEN CONNECTED TO AN ELECTRICAL SOURCE, AND SOME COMPONENTS ON THIS BOARD CAN REACH TEMPERATURES ABOVE CELSIUS. FURTHER, THESE CONDITIONS WILL CONTINUE FOR A SHORT TIME AFTER THE ELECTRICAL SOURCE IS DISCONNECTED UNTIL THE BULK CAPACITORS ARE FULLY DISCHARGED.

Please ensure that appropriate safety procedures are followed when operating this board, as any of the following can occur if you handle or use this board without following proper safety precautions:
● Death ● Serious injury ● Electrocution ● Electrical shock ● Electrical burns ● Severe heat burns

You must read this document in its entirety before operating this board. It is not necessary for you to touch the board while it is energized. All test and measurement probes or attachments must be attached before the board is energized. You must never leave this board unattended or handle it when energized, and you must always ensure that all bulk capacitors have completely discharged prior to handling the board. Do not change the devices to be tested until the board is disconnected from the electrical source and the bulk capacitors have fully discharged.
● ● ● ● ● ●
● ● ● ● ● ●

Introduction

The purpose of this evaluation board is to demonstrate the high-switching performance of Cree 3rd Generation Silicon Carbide SiC Metal Oxide Semiconductor Field-Effect Transistors MOSFETs in a 7L D2PAK package. The new surface-mount device SMD , specifically designed for high voltage MOSFETs, has a small footprint with a wide creepage distance of 7mm between drain and source. The new package also includes a separate driver source connection, which reduces gate ringing and provides clean gate signals. This evaluation board Figure 1 comes configured as a basic half bridge circuit with two C3M0120090J SiC MOSFETs installed. The board can easily be configured into common power conversion topologies such as synchronous boost, synchronous buck, Inverter, and other topologies. This board was designed to make it easy for the user to:
• Evaluate SiC MOSFET switching performance in a 7L D2PAK package to characterize EON and EOFF losses.
• Evaluate thermal performance. The integrated heatsink is predrilled with a blind hole on the backside for thermocouples so the heatsink surface temperature can be accurately estimated.
• Serve as a PC board layout example for driving Gen 3 SiC MOSFETs in the newly developed 7L D2PAK package.
• Easily evaluate the effects of different Rg values, Miller clamps, uni-polar versus bipolar gate drive, fault detection circuit, various thermal interface materials, and cooling methods.

Figure Evaluation Board top and side view

The evaluation board’s physical dimensions are 127mm x 98mm x 58mm. The board comes preassembled with an isolated heatsink, cooling fan, and 2 SiC MOSFETS. The heatsink is attached to the board with five nonconductive screws RENY hexagon socket low head cap bolt M5 6mm .

A block diagram of the evaluation board is shown in Figure Besides the two Cree 900V, C3M0120090 SiC MOSFETs Q1 and Q2 , there are two onboard isolated gate driver circuits to drive both Q1 and Q2. There are four power connectors CON1, CON2, CON3, and CON4 for connecting to the +DC link, -DC link, and midpoint. There is a 20 pin signal/supply voltage ribbon cable connector J10 onboard which carries the logic power, status signals, fault signals, and gate drive control signals.

CON1

Gate

Drive

CON2

CON3,

CON4

Figure Block Diagram

Each gate drive circuit consists of a 2A isolated gate driver chip and a generous 2W isolated DC/DC converter that can comfortably switch the SiC MOSFETs at up to 3MHz. The driver chip provides 1200V of isolation between the low voltage control side and the high voltage drive side. The DC/DC converters are sourced with +12V on their inputs. Through a series of jumpers, JM1-JM6 Figure 4 , the gate drivers can each be configured as a low cost uni-polar +15V/0V gate drive or as a high performance bi-polar gate drive +15V/-3V . The DC/DC converters provide a maximum of 5.2kV of isolation for 60 seconds. The complete board assembly will withstand a 1.5kVAC.rms Hi-pot test for 60 seconds.
+12V
3.3V
+15V COM -3.3V

DESAT CLAMP
+15V 100
3.3V 8

J4 VEE
5.1K
+12V

J3 -3.3V
3.3V
+15V COM -3.3V

DESAT CLAMP

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Datasheet ID: CRD-5FF0912P 507006