FJNS4211RBU

FJNS4211RBU Datasheet

FJNS4211R

Part	Datasheet
FJNS4211RBU	FJNS4211RBU (pdf)

Related Parts	Information
FJNS4211RTA	FJNS4211RTA

PDF Datasheet Preview
FJNS4211R FJNS4211R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor • Complement to FJNS3211R TO-92S 1.Emitter Collector Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter Value Units VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature -100 -55 ~ 150 Equivalent Circuit C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO ICBO hFE VCE sat Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance IC= -100µA, IE=0 IE= -1mA, IB=0 VCB= -30V, IE=0 VCE= -5V, IC= -1mA IC= -10mA, IB= -1mA VCB= -10V, IE=0 f=1MHz Current Gain Bandwidth Product VCE= -10V, IC= -5mA Input Resistor Min. -40 -40 100 Typ. 200 22 Max. Units V µA 2002 Fairchild Semiconductor Corporation FJNS4211R Package Dimensions TO-92S MAX. 1.27TYP 1.27TYP 2002 Fairchild Semiconductor Corporation Dimensions in Millimeters TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

PDF Datasheet Preview

FJNS4211R

FJNS4211R

Switching Application Bias Resistor Built In
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor
• Complement to FJNS3211R

TO-92S
1.Emitter Collector Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

Value

Units

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature
-100
-55 ~ 150

Equivalent Circuit C

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO ICBO hFE VCE sat Cob

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance

IC= -100µA, IE=0 IE= -1mA, IB=0 VCB= -30V, IE=0 VCE= -5V, IC= -1mA IC= -10mA, IB= -1mA VCB= -10V, IE=0 f=1MHz

Current Gain Bandwidth Product

VCE= -10V, IC= -5mA

Input Resistor

Min. -40 -40 100

Typ.
200 22

Max.

Units V µA
2002 Fairchild Semiconductor Corporation

FJNS4211R

Package Dimensions

TO-92S

MAX.
1.27TYP
1.27TYP
2002 Fairchild Semiconductor Corporation

Dimensions in Millimeters

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FJNS4211RBU Datasheet file may be downloaded here without warranties.

Datasheet ID: FJNS4211RBU 514776