FJNS4204RBU

FJNS4204RBU Datasheet

FJNS4204R

Part	Datasheet
FJNS4204RBU	FJNS4204RBU (pdf)

Related Parts	Information
FJNS4204RTA	FJNS4204RTA

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FJNS4204R FJNS4204R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor • Complement to FJNS3204R TO-92S 1.Emitter Collector Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter Value Units VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature -100 -55 ~ 150 Equivalent Circuit C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO ICBO hFE VCE sat fT Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -5mA IC= -10mA, IB= -0.5mA VCE= -10V, IC=-5mA VCB= -10V, IE=0 f=1.0MHz VI off VI on R1/R2 Input Off Voltage Input On Voltage Input Resistor Ratio VCE= -5V, IC= -100µA VCE= -0.3V, IC= -2mA Min. -50 -50 68 Typ. Max. Units V µA 2002 Fairchild Semiconductor Corporation FJNS4204R Typical Characteristics 1000 VCE = - 5V R1 = 47 K R2 = 47 K hFE, DC CURRENT GAIN IC [µA], COLLECTOR CURRENT 10 -1 -100 -1000 IC[mA], COLLECTOR CURRENT Figure DC current Gain

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FJNS4204R

FJNS4204R

Switching Application Bias Resistor Built In
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor
• Complement to FJNS3204R

TO-92S
1.Emitter Collector Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

Value

Units

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature
-100
-55 ~ 150

Equivalent Circuit C

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO ICBO hFE VCE sat fT Cob

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance

IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -5mA IC= -10mA, IB= -0.5mA VCE= -10V, IC=-5mA VCB= -10V, IE=0 f=1.0MHz

VI off VI on R1/R2

Input Off Voltage Input On Voltage Input Resistor Ratio

VCE= -5V, IC= -100µA VCE= -0.3V, IC= -2mA

Min. -50 -50 68

Typ.

Max.

Units V µA
2002 Fairchild Semiconductor Corporation

FJNS4204R

Typical Characteristics
1000

VCE = - 5V R1 = 47 K R2 = 47 K
hFE, DC CURRENT GAIN

IC [µA], COLLECTOR CURRENT
10 -1
-100
-1000

IC[mA], COLLECTOR CURRENT

Figure DC current Gain

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Datasheet ID: FJNS4204RBU 514769