FJNS3215RTA
FJNS3215RTA Datasheet
FJNS3215R
| Part | Datasheet |
|---|---|
FJNS3215RTA |
FJNS3215RTA (pdf) |
| Related Parts | Information |
|---|---|
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FJNS3215RBU |
FJNS3215RBU |
| PDF Datasheet Preview |
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| FJNS3215R FJNS3215R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor TO-92S 1.Emitter Collector Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter Value Units VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature -55 ~ 150 Equivalent Circuit C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO ICBO hFE VCE sat fT Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance IC=10µA, IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=10mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA VCB=10V, IE=0 f=1.0MHz VI off VI on R1/R2 Input Off Voltage Input On Voltage Input Resistor Ratio VCE=5V, VCE=0.3V, IC=20mA Min. 50 33 Typ. Max. Units V µA 2002 Fairchild Semiconductor Corporation FJNS3215R Typical Characteristics 1000 VCE = 5V R1 = 2.2K R2 = 10K VCE = 5V R1 = 2.2K R2 = 10K VI on [V], INPUT VOLTAGE hFE, DC CURRENT GAIN IC [µA], COLLECTOR CURRENT 1000 IC[mA], COLLECTOR CURRENT Figure DC current Gain VCE = 5V |
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