FJNS3211RTA

FJNS3211RTA Datasheet


FJNS3211R

Part Datasheet
FJNS3211RTA FJNS3211RTA FJNS3211RTA (pdf)
Related Parts Information
FJNS3211RBU FJNS3211RBU FJNS3211RBU
PDF Datasheet Preview
FJNS3211R

FJNS3211R

Switching Application Bias Resistor Built In
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor
• Complement to FJNS4211R

TO-92S
1.Emitter Collector Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

Value

Units

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

TSTG

Storage Temperature
-55 ~ 150

Equivalent Circuit C

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO ICBO hFE VCE sat Cob

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance

IC=100µA, IE=0 IE=1mA, IB=0 VCB=30V, IE=0 VCE=5V, IC=1mA IC=10mA, IB=1mA VCB=10V, IE=0 f=1MHz

Current Gain Bandwidth Product

VCE=10V, IC=5mA

Input Resistor

Min. 40 100

Typ.
250 22

Max.

Units V µA
2002 Fairchild Semiconductor Corporation

FJNS3211R

Package Dimensions
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Datasheet ID: FJNS3211RTA 514760