FJNS3211RBU
FJNS3211RBU Datasheet
FJNS3211R
| Part | Datasheet |
|---|---|
FJNS3211RBU |
FJNS3211RBU (pdf) |
| Related Parts | Information |
|---|---|
FJNS3211RTA |
FJNS3211RTA |
| PDF Datasheet Preview |
|---|
| FJNS3211R FJNS3211R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor • Complement to FJNS4211R TO-92S 1.Emitter Collector Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature TSTG Storage Temperature -55 ~ 150 Equivalent Circuit C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO ICBO hFE VCE sat Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance IC=100µA, IE=0 IE=1mA, IB=0 VCB=30V, IE=0 VCE=5V, IC=1mA IC=10mA, IB=1mA VCB=10V, IE=0 f=1MHz Current Gain Bandwidth Product VCE=10V, IC=5mA Input Resistor Min. 40 100 Typ. 250 22 Max. Units V µA 2002 Fairchild Semiconductor Corporation FJNS3211R Package Dimensions |
| More datasheets: B59450T1120A62 | 90021T | FQD2N30TM | HMC707LP5E | BME-500D-600K | SCPE10 | SCPE4 | SCPE6 | SCPE2.5 | FJNS3211RTA |
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