FJNS3209RBU
FJNS3209RBU Datasheet
FJNS3209R
| Part | Datasheet |
|---|---|
FJNS3209RBU |
FJNS3209RBU (pdf) |
| Related Parts | Information |
|---|---|
FJNS3209RTA |
FJNS3209RTA |
| PDF Datasheet Preview |
|---|
| FJNS3209R FJNS3209R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor • Complement to FJNS4209R TO-92S 1.Emitter Collector Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter Value Units VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature -55 ~ 150 Equivalent Circuit C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO ICBO hFE VCE sat Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance IC=100µA, IE=0 IE=1mA, IB=0 VCB=30V, IE=0 VCE=5V, IC=1mA IC=10mA, IB=1mA VCB=10V, IE=0 f=1MHz Current Gain Bandwidth Product VCE=10V, IC=5mA Input Resistor Min. 40 100 Typ. Max. Units V µA 2002 Fairchild Semiconductor Corporation FJNS3209R Typical Characteristics hFE, DC CURRENT GAIN 10000 1000 V = 5V CE R = 4.7K I [mA], COLLECTOR CURRENT Figure DC current Gain 400 350 300 250 200 150 100 T [oC], AMBIENT TEMPERATURE a Figure Power Derating PC[mW], POWER DISSIPATION |
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