FJNS3204R
Part | Datasheet |
---|---|
![]() |
FJNS3204RBU (pdf) |
Related Parts | Information |
---|---|
![]() |
FJNS3204RTA |
PDF Datasheet Preview |
---|
FJNS3204R FJNS3204R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit Driver Circuit, • Built in bias Resistor • Complement to FJNS4204R TO-92S 1.Emitter Collector Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter Value Units VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature -55 ~ 150 Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO ICBO hFE VCE sat fT Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance IC=10µA, IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=5mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA VCB=10V, IE=0 f=1.0MHz VI off VI on R1/R2 Input Off Voltage Input On Voltage Input Resistor Ratio VCE=5V, IC=100µA VCE=0.3V, IC=2mA Min. 50 68 Equivalent Circuit C Typ. Max. Units V µA 2002 Fairchild Semiconductor Corporation FJNS3204R Typical Characteristics 1000 VCE = 5V R1 = 47K R2 = 47K hFE, DC CURRENT GAIN IC [µA], COLLECTOR CURRENT 1000 IC[mA], COLLECTOR CURRENT Figure DC current Gain V = 5V 1000 R = 47K 1 |
More datasheets: 7017X15 | 74LVX574SJ | 74LVX574SJX | 74LVX574M | 74LVX574MX | 74LVX574MTCX | 74LVX574MTC | ELSF-405SYGWA/S530-E2 | CMD204UWC | 7214N/17 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FJNS3204RBU Datasheet file may be downloaded here without warranties.