FJN4312RTA
FJN4312RTA Datasheet
FJN4312R
| Part | Datasheet |
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FJN4312RTA |
FJN4312RTA (pdf) |
| Related Parts | Information |
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FJN4312RBU |
FJN4312RBU |
| PDF Datasheet Preview |
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| FJN4312R FJN4312R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor • Complement to FJN3312R TO-92 Emitter Collector Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter Value Units VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature -100 -55 ~ 150 Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Min. BVCBO Collector-Base Breakdown Voltage IC= -100µA, IE=0 BVCEO Collector-Emitter Breakdown Voltage IC= -1mA, IB=0 ICBO Collector Cut-off Current VCB= -30V, IE=0 DC Current Gain VCE= -5V, IC= -1mA VCE sat Collector-Emitter Saturation Voltage IC= -10mA, IB= -1mA Output Capacitance VCB= -10V, IE=0 f=1MHz Current Gain Bandwidth Product VCE= -10V, IC= -5mA Input Resistor Equivalent Circuit C Typ. 200 47 Max. Units V µA 2002 Fairchild Semiconductor Corporation |
| More datasheets: CY3250-22545-POD | CY8C5468LTI-037 | CY8C5467LTI-007 | CY8C5466LTI-063 | CY8C5466AXI-064 | CY8C5468AXI-018 | CY8C5467AXI-011 | 410-178P-KIT | 26800B-446 | FJN4312RBU |
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