FJN4305RBU

FJN4305RBU Datasheet

FJN4305R

Part	Datasheet
FJN4305RBU	FJN4305RBU (pdf)

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FJN4305R FJN4305R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor • Complement to FJN3305R TO-92 Emitter Collector Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter Value Units VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature -100 -55 ~ 150 Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO ICBO hFE VCE sat Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -5mA IC= -10mA, IB= -0.5mA VCB= -10V, IE=0 f=1.0MHz fT VI off VI on R1/R2 Current Gain Bandwidth Product Input Off Voltage Input On Voltage Input Resistor Ratio VCE= -10V, IC= -5mA VCE= -5V, IC= -100µA VCE= -0.3V, IC= -20mA Min. -50 -50 30 Equivalent Circuit Typ. Max. Units V µA V pF MHz V 2002 Fairchild Semiconductor Corporation FJN4305R Typical Characteristics hFE, DC CURRENT GAIN 1000 100 VCE = - 5V R1 = 4.7K R2 = 10K -100 IC[mA], COLLECTOR CURRENT Figure DC current Gain -10k VCE = - 5V R = 4.7K R2 = 10K

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FJN4305R

FJN4305R

Switching Application Bias Resistor Built In
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor
• Complement to FJN3305R

TO-92

Emitter Collector Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

Value

Units

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature
-100
-55 ~ 150

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO ICBO hFE VCE sat Cob

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance

IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -5mA IC= -10mA, IB= -0.5mA VCB= -10V, IE=0 f=1.0MHz
fT VI off VI on R1/R2

Current Gain Bandwidth Product Input Off Voltage Input On Voltage Input Resistor Ratio

VCE= -10V, IC= -5mA VCE= -5V, IC= -100µA VCE= -0.3V, IC= -20mA

Min. -50 -50 30

Equivalent Circuit

Typ. Max.

Units V µA V pF

MHz V
2002 Fairchild Semiconductor Corporation

FJN4305R

Typical Characteristics
hFE, DC CURRENT GAIN
1000 100

VCE = - 5V R1 = 4.7K R2 = 10K
-100

IC[mA], COLLECTOR CURRENT

Figure DC current Gain
-10k

VCE = - 5V R = 4.7K

R2 = 10K

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Datasheet ID: FJN4305RBU 514740