FJN3314RBU
FJN3314RBU Datasheet
FJN3314R
| Part | Datasheet |
|---|---|
FJN3314RBU |
FJN3314RBU (pdf) |
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| FJN3314R FJN3314R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1 • Complement to FJN4314R TO-92 Emitter Collector Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter Value Units VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature -55 ~ 150 Equivalent Circuit Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO ICBO hFE VCE sat fT Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance IC=10µA, IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=5mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA VCB=10V, IE=0 f=1.0MHz VI off VI on R1/R2 Input Off Voltage Input On Voltage Input Resistor Ratio VCE=5V, IC=100µA VCE=0.2V, IC=5mA Min. 50 68 Typ. Max. Units V µA V MHz pF V 2002 Fairchild Semiconductor Corporation FJN3314R Package Dimensions TO-92 1.27TYP 1.27TYP R2.29 3.86MAX 2002 Fairchild Semiconductor Corporation Dimensions in Millimeters TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. |
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