FJN3303RBU

FJN3303RBU Datasheet


FJN3303R

Part Datasheet
FJN3303RBU FJN3303RBU FJN3303RBU (pdf)
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FJN3303R

FJN3303R

Switching Application Bias Resistor Built In
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor
• Complement to FJN4303R

TO-92

Emitter Collector Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

Value

Units

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature
-55 ~ 150

Equivalent Circuit C

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO ICBO hFE VCE sat fT Cob

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance

IC=10µA, IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=5mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA VCB=10V, IE=0 f=1.0MHz

VI off VI on R1/R2

Input Off Voltage Input On Voltage Input Resistor Ratio

VCE=5V, IC=100µA VCE=0.3V, IC=5mA

Min. 50 56

Typ.

Max.

Units V µA
2002 Fairchild Semiconductor Corporation

FJN3303R

Typical Characteristics
1000

VCE = 5V

R1 = 22K

R2 = 22K
hFE, DC CURRENT GAIN

IC [µA], COLLECTOR CURRENT
1000

IC[mA], COLLECTOR CURRENT

Figure DC current Gain

V = 5V
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Datasheet ID: FJN3303RBU 514724