FJH1100_T50R
FJH1100_T50R Datasheet
FJH1100 Ultra Low Leakage Diode
| Part | Datasheet |
|---|---|
FJH1100_T50R |
FJH1100_T50R (pdf) |
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| FJH1100 Ultra Low Leakage Diode FJH1100 Ultra Low Leakage Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Parameter Value Wiv IF PD TSTG Working Inverse Voltage DC Forward Current IF Total Power Dissipation at TA = 25°C Linear Derating Factor from TA = 25°C Thermal Resistance Junction-to-Ambient Storage Temperature Operating Junction Temperature 15 150 250 300 -55 to +200 175 * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Electrical Characteristics Ta = 25°C unless otherwise noted Parameter Test Conditions Breakdown Voltage Forward Voltage Diode Capacitance IR = 5.0µA VR = 5.0V VR = 15V IF = 1.0µA IF = 10µA IF = 100µA IF = 1.0mA IF = 10mA IF = 50mA IF = 100mA VR = 0V, f = 1.0MHz Units V mA mW/°C °C/W °C °C Typ. 530 605 685 780 895 995 Max. 1050 Units 2005 Fairchild Semiconductor Corporation FJH1100 Ultra Low Leakage Diode TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx IntelliMAX ActiveArray FASTr ISOPLANAR Power247 |
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