FDPF7N50U / FDPF7N50U_G N-Channel UniFETTM Ultra FRFETTM MOSFET
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FDPF7N50U / FDPF7N50U_G N-Channel UniFETTM Ultra FRFETTM MOSFET FDPF7N50U / FDPF7N50U_G N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 5 A, November 2013 • RDS on = Max. VGS = 10 V, ID = A • Low Gate Charge Typ. nC • Low Crss Typ. 9 pF • 100% Avalanche Tested • Improved dv/dt Capability • LCD/LED TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply TO-220F MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Parameter FDPF7N50U / FDPF7N50U_G VDSS Drain-Source Voltage Drain Current - Continuous TC = 25C - Continuous TC = 100C Drain Current - Pulsed Note 1 VGSS Gate-Source voltage 30 Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 dv/dt Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25C - Derate above 25C TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds * Drain current limited by maximum junction temperature. Thermal Characteristics -55 to +150 300 Parameter Package Marking and Ordering Information Part Number FDPF7N50U FDPF7N50U_G Top Mark FDPF7N50U Package TO-220F TO-220F Packing Method Tube Reel Size N/A N/A Tape Width N/A N/A Quantity 50 units 50 units Electrical Characteristics TC = 25°C unless otherwise noted. Parameter Conditions Min. Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125°C IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V IGSSR On Characteristics VGS th Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS on Static Drain-Source On-Resistance VGS = 10 V, ID = A Forward Transconductance VDS = 40 V, ID = A Dynamic Characteristics Ciss Coss Input Capacitance Output Capacitance VDS = 25 V, VGS = 0 V, f = MHz Crss Switching Characteristics |
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