FJC2098QTF
FJC2098QTF Datasheet
FJC2098 NPN Epitaxial Silicon Transistor
| Part | Datasheet |
|---|---|
FJC2098QTF |
FJC2098QTF (pdf) |
| Related Parts | Information |
|---|---|
FJC2098RTF |
FJC2098RTF |
| PDF Datasheet Preview |
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| FJC2098 NPN Epitaxial Silicon Transistor July 2005 FJC2098 NPN Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC1386 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking SOT-89 Base Collector Emitter Absolute Maximum Ratings TC = 25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Power Dissipation TC=25°C Junction Temperature Storage Temperature Weekly code Year code hFE grage Value 50 20 6 5 150 - 55 ~ 150 Units V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICEO IEBO hFE VCE sat VBE sat COB Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Output Capacitance IC = 50µA, IE = 0 IC = 1mA, IB = 0 IE = 50µA, IC = 0 VCE = 40V, VB = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 0.5A IC = 4A, IB = 0.1A IC = 4A, IB = 0.1A VCB = 20V, IE = 0, f = 1MHz Min. 50 20 6 Typ. Max. Units V µA µA 2005 Fairchild Semiconductor Corporation FJC2098 NPN Epitaxial Silicon Transistor hFE Classification Classification 120 ~ 270 Package Marking and Ordering Information Device Marking 2098 Device FJC2098 Package SOT-89 Reel Size 13” 180 ~ 390 Tape Width Quantity 4,000 FJC2098 NPN Epitaxial Silicon Transistor Typical Performance Characteristics Figure Static Characteristic IC[mA], COLLECTOR CURRENT 14 IB=200mA IB=20mA VCE[V], COLLECTOR-EMITTER VOLTAGE Figure DC Current Gain 1000 Ta=125oC Ta=25oC Ta=-40oC VCE=2V hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT Figure Collector-Emitter Saturation Voltage Figure Base-Emitter Saturation Voltage IC=40IB IC=40IB VBE sat [V], SATURATION VOLTAGE VCE sat [V], SATURATION VOLTAGE Ta=125oC Ta=25oC Ta=-40oC Ta=-40oC Ta=25oC Ta=125oC 1E-3 IC[A], COLLECTOR CURRENT Figure Base-Emitter On Voltage IC[A], COLLECTOR CURRENT |
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