FJAFS1720TU

FJAFS1720TU Datasheet


FJAFS1720 ESBC Rated NPN Power Transistor

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FJAFS1720 ESBC Rated NPN Power Transistor

January 2013

FJAFS1720 ESBC Rated NPN Power Transistor

ESBC Features FDS8817 MOSFET

VCS ON V

IC 10 A

Equiv. RCS ON Ω
• Low Equivalent On Resistance
• Very Fast Switch 150 kHz
• Squared RBSOA Up to
• Avalanche Rated
• Low Driving Capacitance, No Miller Capacitance
• Low Switching Losses
• Reliable HV Switch No False Triggering due to

High dv/dt Transients
• High-Voltage and High-Speed Power Switches
• Emitter-Switched Bipolar/MOSFET Cascode

ESBC
• Smart Meters, Smart Breakers, SMPS,

HV Industrial Power Supplies
• Motor Drivers and Ignition Drivers

The FJAFS1720 is a low-cost, high-performance power switch designed to provide the best performance when used in an ESBC configuration in applications such as power supplies, motor drivers, smart grid, or ignition switches. The power switch is designed to operate up to 1700 volts and up to 12 amps, while providing exceptionally low on-resistance and very low switching losses.

The ESBC switch is designed to be driven using off-theshelf power supply controllers or drivers. The ESBC MOSFET is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching, The ESBC configuration further minimizes the required driving power because it does not have Miller capacitance.

The power switch is manufactured using a dedicated high-voltage bipolar process and is packaged in a highvoltage TO-3PF package.

TO-3PF
1.Base 2.Collector 3.Emitter

Figure Pin Configuration

E3 Figure Internal Schematic Diagram

FJAFS1720

FDS8817 G

Figure ESBC Configuration 2
Ordering Information

Part Number FJAFS1720TU

Marking J1720

Package TO-3PF

Notes Figure of Merit. Other Fairchild MOSFETs can be used in this ESBC application.
2012 Fairchild Semiconductor Corporation

Packing Method TUBE

FJAFS1720 ESBC Rated NPN Power Transistor

Absolute Maximum Ratings 3

Values are at TA = 25°C unless otherwise noted.

Parameter

VCBO VCEO VEBO

IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Dissipation TC = 25°C Operating and Junction Temperature Range Storage Temperature Range

Note:

Pulse Test is Pulse Width 5 ms, Duty Cycle

Thermal Characteristics

Values are at TA = 25°C unless otherwise noted.

Parameter

Thermal Resistance, Junction to Case

Electrical Characteristics 4

Values are at TA = 25°C unless otherwise noted.

Parameter

ICES ICBO IEBO BVCBO BVCEO BVEBO

Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Base-Emitter Breakdown Voltage
hFE1 hFE2

DC Current Gain

VCE sat Collector-Emitter Saturation Voltage

VBE sat Base-Emitter Saturation Voltage

Test Conditions

VCB = 1400 V, RBE = 0 VCB = 800 V, IE = 0 VEB = 4 V, IC = 0 IC = 500 uA, IE = 0 IC = 5 mA, IB = 0 IE = 500 uA, IC = 0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 11 A IC = 10 A, IB = A, hFE = 3 IC = 5 A, IB = A, hFE = 5 IC = 1 A, IB = A, hFE = 10 IC = 10 A, IB = A, hFE = 3

Note:

Pulse Test Pulse Width 5 ms, Duty Cycle

Value 1700 800
6 12 60 -55 to +125 -55 to +150

Units V A W °C °C

Max.

Units °C/W

Min.
1700 800

Typ.
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Datasheet ID: FJAFS1720TU 514703