FJAFS1720 ESBC Rated NPN Power Transistor
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RCS ON Ω • Low Equivalent On Resistance • Very Fast Switch 150 kHz • Squared RBSOA Up to • Avalanche Rated • Low Driving Capacitance, No Miller Capacitance • Low Switching Losses • Reliable HV Switch No False Triggering due to High dv/dt Transients • High-Voltage and High-Speed Power Switches • Emitter-Switched Bipolar/MOSFET Cascode ESBC • Smart Meters, Smart Breakers, SMPS, HV Industrial Power Supplies • Motor Drivers and Ignition Drivers The FJAFS1720 is a low-cost, high-performance power switch designed to provide the best performance when used in an ESBC configuration in applications such as power supplies, motor drivers, smart grid, or ignition switches. The power switch is designed to operate up to 1700 volts and up to 12 amps, while providing exceptionally low on-resistance and very low switching losses. The ESBC switch is designed to be driven using off-theshelf power supply controllers or drivers. The ESBC MOSFET is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching, The ESBC configuration further minimizes the required driving power because it does not have Miller capacitance. The power switch is manufactured using a dedicated high-voltage bipolar process and is packaged in a highvoltage TO-3PF package. TO-3PF 1.Base 2.Collector 3.Emitter Figure Pin Configuration E3 Figure Internal Schematic Diagram FJAFS1720 FDS8817 G Figure ESBC Configuration 2 Ordering Information Part Number FJAFS1720TU Marking J1720 Package TO-3PF Notes Figure of Merit. Other Fairchild MOSFETs can be used in this ESBC application. 2012 Fairchild Semiconductor Corporation Packing Method TUBE FJAFS1720 ESBC Rated NPN Power Transistor Absolute Maximum Ratings 3 Values are at TA = 25°C unless otherwise noted. Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Dissipation TC = 25°C Operating and Junction Temperature Range Storage Temperature Range Note: Pulse Test is Pulse Width 5 ms, Duty Cycle Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Parameter Thermal Resistance, Junction to Case Electrical Characteristics 4 Values are at TA = 25°C unless otherwise noted. Parameter ICES ICBO IEBO BVCBO BVCEO BVEBO Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Base-Emitter Breakdown Voltage hFE1 hFE2 DC Current Gain VCE sat Collector-Emitter Saturation Voltage VBE sat Base-Emitter Saturation Voltage Test Conditions VCB = 1400 V, RBE = 0 VCB = 800 V, IE = 0 VEB = 4 V, IC = 0 IC = 500 uA, IE = 0 IC = 5 mA, IB = 0 IE = 500 uA, IC = 0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 11 A IC = 10 A, IB = A, hFE = 3 IC = 5 A, IB = A, hFE = 5 IC = 1 A, IB = A, hFE = 10 IC = 10 A, IB = A, hFE = 3 Note: Pulse Test Pulse Width 5 ms, Duty Cycle Value 1700 800 6 12 60 -55 to +125 -55 to +150 Units V A W °C °C Max. Units °C/W Min. 1700 800 Typ. 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