FJAF4310YTU
FJAF4310YTU Datasheet
FJAF4310 NPN Epitaxial Silicon Transistor
| Part | Datasheet |
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FJAF4310YTU |
FJAF4310YTU (pdf) |
| Related Parts | Information |
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FJAF4310RTU |
FJAF4310RTU |
| PDF Datasheet Preview |
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| FJAF4310 NPN Epitaxial Silicon Transistor October 2009 FJAF4310 NPN Epitaxial Silicon Transistor • Audio Power Amplifier • High Current Capability IC=10A • High Power Dissipation • Wide S.O.A • Complement to FJAF4210 Absolute Maximum Ratings* TA=25°C unless otherwise noted VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Base Current DC Collector Dissipation TC=25°C Junction to Case Junction Temperature Storage Temperature TO-3PF 1.Base 2.Collector 3.Emitter Value 200 140 6 10 80 150 - 55 ~ 150 Units V A W °C/W °C °C Electrical Characteristics TA=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO IEBO hFE VCE sat Cob Collector-Base Breakdown Voltage IC=5mA, IE=0 Collector-Emitter Breakdown Voltage IC=50mA, RBE=∞ Emitter-Base Breakdown Voltage IE=5mA, IC=0 Collector Cut-off Current VCB=200V, IE=0 Emitter Cut-off Current VEB=6V, IC=0 * DC Current Gain VCE=4V, IC=3A Collector-Emitter Saturation Voltage IC=5A, IB=0.5A Output Capacitance VCB=10V, f=1MHz Current Gain Bandwidth Product VCE=5V, IC=1A * Pulse Test PW=20us Min. 200 140 6 Typ. 250 30 Max. 10 180 Units V uA V pF MHz |
| More datasheets: SRAH-03E3300 | SRAH-03E500R | AT24C1024W-10SI-2.7 | AT24C1024-10PI-2.7 | AT24C1024C1-10CI-2.7 | AT24C1024-10CI-2.7 | AT24C1024W-10SI-2.7-T | 3439 | 1191 | DN-3021-1 |
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