FGPF50N30TTU
FGPF50N30TTU Datasheet
FGPF50N30T 300V, 50A PDP IGBT
| Part | Datasheet |
|---|---|
FGPF50N30TTU |
FGPF50N30TTU (pdf) |
| PDF Datasheet Preview |
|---|
| FGPF50N30T 300V, 50A PDP IGBT FGPF50N30T 300V, 50A PDP IGBT • High current capability • Low saturation voltage VCE sat =1.4V IC = 30A • High input impedance • Fast switching • RoHS compliant • PDP System January 2008 Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. TO-220F 1.Gate 2.Collector 3.Emitter Absolute Maximum Ratings VCES VGES ICM 1 TJ Tstg TL Collector to Emitter Voltage Gate to Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature TC = 25oC TC = 25oC TC = 100oC Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Notes 1 Repetitive test , Pulse width=100usec , Duty=0.1 * IC_pluse limited by max Tj Ratings 300 ± 30 120 -55 to +150 -55 to +150 300 Typ. Max. Units V A W oC Units oC/W oC/W 2008 Fairchild Semiconductor Corporation FGPF50N30T 300V, 50A PDP IGBT Package Marking and Ordering Information Device Marking Device FGPF50N30T FGPF50N30TTU Package TO-220F Packaging Type Rail / Tube Qty per Tube 50ea Max Qty per Box Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ICES IGES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250µA Collector Cut-Off Current G-E Leakage Current VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V On Characteristics VGE th G-E Threshold Voltage VCE sat Collector to Emitter Saturation Voltage IC = 250µA, VCE = VGE IC = 15A, VGE = 15V IC = 30A, VGE = 15V IC = 50A, VGE = 15V, TC = 25oC IC = 50A, VGE = 15V, TC = 125oC Dynamic Characteristics Cies Coes Cres VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td on tr td off tf td on tr td off tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCC = 200V, IC = 30A, RG = VGE = 15V, Resistive Load, TC = 25oC VCC = 200V, IC = 30A, RG = VGE = 15V, Resistive Load, TC = 125oC VCE = 200V, IC = 30A, VGE = 15V V/oC |
| More datasheets: 1739 | EPC2100 | CDBUR0520 | 5681F5;5 | 5681F3;3 | 5681F5LC_5LC | 5681F7;7 | 5681F5LC_X | 5681F1_5 | 5681F1;1 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FGPF50N30TTU Datasheet file may be downloaded here without warranties.