EPC2100

EPC2100 Datasheet

EPC2100 Enhancement-Mode GaN Power Transistor Half-Bridge

Part	Datasheet
EPC2100	EPC2100 (pdf)

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FET DATASHEET EPC2100 Enhancement-Mode GaN Power Transistor Half-Bridge VDS , 30 V RDS on , mΩ Q1 , mΩ Q2 ID , 10 A Q1 , 40 A Q2 EPC2100 EFFICIENT POWER CONVERSION Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS on , while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate. DEVICE Q1 Maximum Ratings PARAMETER VALUE UNIT Drain-to-Source Voltage Continuous VDS Drain-to-Source Voltage up to 10,000 5 ms pulses at 150°C Continuous TA = = 92°C/W Pulsed 25°C, TPULSE = 300 µs Gate-to-Source Voltage VGS Gate-to-Source Voltage 100 6 V -4 TJ Operating Temperature TSTG Storage Temperature to 150 °C to 150 Drain-to-Source Voltage Continuous VDS Drain-to-Source Voltage up to 10,000 5 ms pulses at 150°C Continuous TA = = 22°C/W Pulsed 25°C, TPULSE = 300 µs Gate-to-Source Voltage VGS Gate-to-Source Voltage TJ Operating Temperature TSTG Storage Temperature 400 6 V -4 to 150 °C to 150 Thermal Characteristics PARAMETER TYP UNIT R0JC Thermal Resistance, Junction to Case R0JB Thermal Resistance, Junction to Board °C/W R0JA Thermal Resistance, Junction to Ambient Note 1 Note 1 is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See for details EPC2100 ICs are supplied only in passivated die form with solder bumps Die Size mm x mm

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FET DATASHEET

EPC2100 Enhancement-Mode GaN Power Transistor Half-Bridge

VDS , 30 V RDS on , mΩ Q1 , mΩ Q2 ID , 10 A Q1 , 40 A Q2

EPC2100

EFFICIENT POWER CONVERSION

Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS on , while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.

DEVICE Q1

Maximum Ratings

PARAMETER

VALUE UNIT

Drain-to-Source Voltage Continuous

VDS Drain-to-Source Voltage up to 10,000 5 ms pulses at 150°C

Continuous TA = = 92°C/W

Pulsed 25°C, TPULSE = 300 µs

Gate-to-Source Voltage VGS Gate-to-Source Voltage
100 6 V -4

TJ Operating Temperature TSTG Storage Temperature
to 150 °C
to 150

Drain-to-Source Voltage Continuous

VDS Drain-to-Source Voltage up to 10,000 5 ms pulses at 150°C

Continuous TA = = 22°C/W

Pulsed 25°C, TPULSE = 300 µs

Gate-to-Source Voltage VGS Gate-to-Source Voltage

TJ Operating Temperature

TSTG Storage Temperature
400 6 V -4
to 150 °C
to 150

Thermal Characteristics

PARAMETER

TYP UNIT

R0JC

Thermal Resistance, Junction to Case

R0JB

Thermal Resistance, Junction to Board
°C/W

R0JA

Thermal Resistance, Junction to Ambient Note 1

Note 1 is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See for details

EPC2100 ICs are supplied only in passivated die form with solder bumps Die Size mm x mm

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Datasheet ID: EPC2100 510920