FGPF30N30
FGPF30N30 Datasheet
FGPF30N30 300V, 30A PDP IGBT
| Part | Datasheet |
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FGPF30N30 |
FGPF30N30 (pdf) |
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| FGPF30N30 300V, 30A PDP IGBT FGPF30N30 300V, 30A PDP IGBT • High Current Capability • Low saturation voltage VCE sat =1.4V IC = 20A • High Input Impedance • Fast switching • RoHS Complaint Application PDP System February 2009 Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF30N30 offers the optimum solution for PDP applications where low-condution loss is essential. TO-220F 1.Gate 2.Collector 3.Emitter Absolute Maximum Ratings VCES VGES IC pulse 1 PD TJ Tstg TL Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature TC = 25oC TC = 25oC TC = 100oC Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Notes 1 Repetitive test , pluse width = 100usec , Duty = * Ic_pluse limited by max Tj FGPF30N30 300 ± 30 80 46 -55 to +150 -55 to +150 Units V A W oC Typ. Max. Units oC/W oC/W 2006 Fairchild Semiconductor Corporation FGPF30N30 300V, 30A PDP IGBT Package Marking and Ordering Information Device Marking FGPF30N30 Device FGPF30N30TU Package TO-220F Packaging Type Rail / Tube Electrical Characteristics TC = 25oC unless otherwise noted Parameter Test Conditions Off Characteristics BVCES Collector-Emitter Breakdown Voltage ICES IGES Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 250uA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V On Characteristics VGE th G-E Threshold Voltage VCE sat Collector to Emitter Saturation Voltage IC = 250uA, VCE = VGE IC =10A, VGE = 15V IC =20A, VGE = 15V IC = 30A, VGE = 15V TC = 25oC IC = 30A, VGE = 15V TC = 125oC Dynamic Characteristics Cies Coes Cres VCE = 30V, VGE = 0V f = 1MHz Switching Characteristics td on tr td off tf td on tr td off tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 200 V, IC = 20A RG = VGE = 15V Resistive Load, TC = 25oC VCC = 200 V, IC = 20A RG = VGE = 15V Resistive Load, TC = 125oC VCE = 200 V, IC = 20A VGE = 15V Qty per Tube 50ea Max Qty per Box Min. Typ. Max. Units |
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