FGI40N60SFTU
FGI40N60SFTU Datasheet
FGI40N60SF 600V, 40A Field Stop IGBT
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FGI40N60SFTU |
FGI40N60SFTU (pdf) |
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| FGI40N60SF 600V, 40A Field Stop IGBT FGI40N60SF 600V, 40A Field Stop IGBT • High current capability • Low saturation voltage VCE sat =2.3V IC = 40A • High input impedance • Fast switching • RoHS compliant • Induction Heating, UPS, SMPS, PFC July 2009 Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential. I2-PAK Absolute Maximum Ratings VCES VGES IC ICM 1 TJ Tstg TL Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature TC = 25oC TC = 100oC TC = 25oC TC = 25oC TC = 100oC Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Notes 1 Repetitive rating Pulse width limited by max. junction temperature Thermal Characteristics Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 600 20 80 40 120 290 116 -55 to +150 -55 to +150 Typ. Max. Units V A W oC Units oC/W oC/W 2009 Fairchild Semiconductor Corporation FGI40N60SF 600V, 40A Field Stop IGBT Package Marking and Ordering Information Device Marking FGI40N60SF Device FGI40N60SFTU Package TO262 Packaging Type Tube Qty per Tube 50ea Max Qty per Box Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ICES IGES Collector to Emitter Breakdown Voltage VGE = 0V, IC = Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = Collector Cut-Off Current G-E Leakage Current VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V On Characteristics VGE th G-E Threshold Voltage VCE sat Collector to Emitter Saturation Voltage IC = VCE = VGE IC = 40A, VGE = 15V IC = 40A, VGE = 15V, TC = 125oC Dynamic Characteristics Cies Coes Cres VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td on tr td off tf Eon Eoff Ets td on tr td off tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCC = 400V, IC = 40A, RG = VGE = 15V, Inductive Load, TC = 25oC VCC = 400V, IC = 40A, RG = VGE = 15V, Inductive Load, TC = 125oC VCE = 400V, IC = 40A, VGE = 15V V/oC |
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