VMMK-1225-TR2G

VMMK-1225-TR2G Datasheet

VMMK-1225 to 26 GHz Low Noise E-PHEMT in a Wafer Scale Package

Part	Datasheet
VMMK-1225-TR2G	VMMK-1225-TR2G (pdf)

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VMMK-1225 to 26 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet The use of micron gates allow a ultra low noise figure below 1dB from 500 MHz to 12 GHz with respectable associated gain. With a flat transconductance over bias and frequency the VMMK-1225 provides excellent linearity of over 22 dBm and power over 10 dBm at one dB compression. This product is easy to use since it requires only positive DC voltages for bias and low matching coefficients for simple impedance matching to 50 Ω systems. The VMMK-1225 is intended for any 500MHz to 26.5GHz application including 802.11abgn WLAN, WiMax, BWA & and military applications. WLP 0402, 1mm x 0.5mm x mm • AYY Gate • AYY Drain Pin Connections Top View Notes Top view package marking provides orientation • Sub-miniature 0402 1mm x 0.5mm Surface Mount Leadless Package • Low height 0.25mm • Frequency Range DC to GHz • Enhancement Mode[1] • micron gate length • Tape and Reel packaging option available Specifications • 0.87dB Fmin • 11dB Ga • +23 dBm output 3rd order intercept • +8 dBm output power • GHz, 3.5GHz, 5-6GHz WLAN and WiMax notebook computer, access point and mobile wireless applications • DBS 10 to 13 GHz receivers • VSAT and SATCOM 13 to 18 GHz systems • & BWA systems • WLL and MMDS Transceivers • General purpose discrete E-pHEMT for other ultra low noise applications Notes The Avago enhancement mode pHEMT devices do not require a negative gate bias voltage as they are “normally off”. They can help simplify the design and reduce the cost of receivers and transmitters in many applications from 500 MHz to 18 GHz gate source Notes “A” = Device Code “YY” = Year Code drain Attention Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 20 V class A ESD Human Body Model = 100 V Class O Refer to Avago Application Note A004R Electrostatic Discharge, Damage and Control. VMMK-1225 Absolute Maximum Ratings Parameters/Condition Unit Drain-Source Voltage[2] V Gate-Source Voltage[2] V Gate-Drain Voltage[2] Drain Current[2] Gate Current Total Power Dissipation[3] mW RF CW Input Power Max dBm Max channel temperature C Thermal Resistance[4] Max 5 -5 to 1 -5 to 1 50 250 10 +150 200 Notes Operation in excess of any of these conditions may result in permanent damage to this device. Assumes DC quiescent conditions Ambient operational temperature TA=25 °C unless otherwise noted. Thermal resistance measured using 150 °C Liquid Crystal Measurement Method The device can handle + 10 dBm RF input power provided lgs is limited to 1 mA VGS=0.900 50 VGS=0.850 Part Number Ordering Information No. of Devices VMMK-1225-BLKG VMMK-1225-TR1G 5000 Container antistatic bag 7” Reel Package Dimension Outline Symbol Min mm Max mm Notes All dimensions are in mm Device Orientation REEL USER FEED DIRECTION CARRIER TAPE USER FEED DIRECTION • AYY • AYY • AYY • AYY TOP VIEW Notes “A” = Device Code “YY” = Month Code 8 mm END VIEW Note 2 Note 1 Bo 5º <Max> E F Note 2 W Bo RO.1 5º <Max> Scale 5:1 B-B Section Scale 5:1 A-A Section Ao = mm Bc = mm Ko = + 0 mm Notice 10 sprocket hole pitch cumulative tolerance is mm Pocket position relative to sprocket hole measured as true position of pocket not pocket hole Ao & Bo measured on a place 0.3mm above the bottom of the pocket to top surface of the carrier Ko measured from a plane on the inside bottom of the pocket to the top surface of the carrier camber shall be not than 1mm per 100mm through a length of 250mm Symbol K1 Po P1 P2 Do D1 E F Po W T Unit mm Parameter and Test Condition For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries. Data subject to change. Copyright 2005-2014 Avago Technologies Limited. All rights reserved. AV02-1082EN - January 9, 2014

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VMMK-1225 to 26 GHz Low Noise E-PHEMT in a Wafer Scale Package

Data Sheet

The use of micron gates allow a ultra low noise figure below 1dB from 500 MHz to 12 GHz with respectable associated gain. With a flat transconductance over bias and frequency the VMMK-1225 provides excellent linearity of over 22 dBm and power over 10 dBm at one dB compression. This product is easy to use since it requires only positive DC voltages for bias and low matching coefficients for simple impedance matching to 50 Ω systems. The VMMK-1225 is intended for any 500MHz to 26.5GHz application including 802.11abgn WLAN, WiMax, BWA & and military applications.

WLP 0402, 1mm x 0.5mm x mm
• AYY

Gate
• AYY

Drain

Pin Connections Top View Notes Top view package marking provides orientation
• Sub-miniature 0402 1mm x 0.5mm Surface Mount Leadless Package
• Low height 0.25mm
• Frequency Range DC to GHz
• Enhancement Mode[1]
• micron gate length
• Tape and Reel packaging option available

Specifications
• 0.87dB Fmin
• 11dB Ga
• +23 dBm output 3rd order intercept
• +8 dBm output power
• GHz, 3.5GHz, 5-6GHz WLAN and WiMax notebook computer, access point and mobile wireless applications
• DBS 10 to 13 GHz receivers
• VSAT and SATCOM 13 to 18 GHz systems
• & BWA systems
• WLL and MMDS Transceivers
• General purpose discrete E-pHEMT for other ultra low
noise applications

Notes The Avago enhancement mode pHEMT devices do not require a
negative gate bias voltage as they are “normally off”. They can help simplify the design and reduce the cost of receivers and transmitters in many applications from 500 MHz to 18 GHz
gate
source

Notes “A” = Device Code “YY” = Year Code
drain

Attention Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 20 V class A ESD Human Body Model = 100 V Class O Refer to Avago Application Note A004R Electrostatic Discharge, Damage and Control.

VMMK-1225 Absolute Maximum Ratings

Parameters/Condition

Unit

Drain-Source Voltage[2] V

Gate-Source Voltage[2] V

Gate-Drain Voltage[2]

Drain Current[2]

Gate Current

Total Power Dissipation[3] mW

RF CW Input Power Max dBm

Max channel temperature C

Thermal Resistance[4]

Max 5 -5 to 1 -5 to 1 50 250 10 +150 200

Notes Operation in excess of any of these conditions may result in
permanent damage to this device. Assumes DC quiescent conditions Ambient operational temperature TA=25 °C unless otherwise noted. Thermal resistance measured using 150 °C Liquid Crystal

Measurement Method The device can handle + 10 dBm RF input power provided lgs is
limited to 1 mA

VGS=0.900
50 VGS=0.850
Part Number Ordering Information

No. of Devices

VMMK-1225-BLKG

VMMK-1225-TR1G
5000

Container antistatic bag 7” Reel

Package Dimension Outline

Symbol Min mm Max mm

Notes All dimensions are in mm

Device Orientation

REEL

USER FEED DIRECTION

CARRIER TAPE

USER FEED DIRECTION
• AYY
• AYY
• AYY
• AYY

TOP VIEW Notes “A” = Device Code “YY” = Month Code
8 mm END VIEW

Note 2

Note 1

Bo 5º <Max>

E F Note 2 W Bo

RO.1
5º <Max>

Scale 5:1 B-B Section

Scale 5:1 A-A Section

Ao = mm

Bc = mm

Ko = + 0 mm

Notice 10 sprocket hole pitch cumulative tolerance is mm Pocket position relative to sprocket hole measured as true position of pocket not pocket hole Ao & Bo measured on a place 0.3mm above the bottom of the pocket to top surface of the carrier Ko measured from a plane on the inside bottom of the pocket to the top surface of the carrier camber shall be not than 1mm per 100mm through a length of 250mm

Symbol K1 Po P1 P2 Do D1 E F Po W T

Unit mm

Parameter and Test Condition

For product information and a complete list of distributors, please go to our web site:

Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries. Data subject to change. Copyright 2005-2014 Avago Technologies Limited. All rights reserved. AV02-1082EN - January 9, 2014

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Datasheet ID: VMMK-1225-TR2G 520526