FGH40N6S2D
FGH40N6S2D Datasheet
FGH40N6S2D
| Part | Datasheet |
|---|---|
FGH40N6S2D |
FGH40N6S2D (pdf) |
| PDF Datasheet Preview |
|---|
| FGH40N6S2D Juiy 2002 FGH40N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode The FGH40N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability UIS . These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: • Power Factor Correction PFC circuits • Full bridge topologies • Half bridge topologies • Push-Pull circuits • Uninterruptible power supplies • Zero voltage and zero current switching circuits IGBT co-pack formerly Developmental Type TA49340 Diode formerly Developmental Type TA49391 Features • 100kHz Operation at 390V, 24A • 200kHZ Operation at 390V, 18A • 600V Switching SOA Capability • Typical Fall Time. 85ns at TJ = 125oC • Low Gate Charge 35nC at VGE = 15V • Low Plateau Voltage .6.5V Typical • UIS Rated 260mJ • Low Conduction Loss Package JEDEC STYLE TO-247 COLLECTOR BOTTOM SIDE METAL Device Maximum Ratings TC= 25°C unless otherwise noted Parameter Ratings Units BVCES Collector to Emitter Breakdown Voltage IC25 Collector Current Continuous, TC = 25°C IC110 Collector Current Continuous, TC = 110°C Collector Current Pulsed Note 1 VGES Gate to Emitter Voltage Continuous ±20 VGEM Gate to Emitter Voltage Pulsed ±30 SSOA Switching Safe Operating Area at TJ = 150°C, Figure 2 100A at 600V Pulsed Avalanche Energy, ICE = 30A, L = 1mH, VDD = 50V Power Dissipation Total TC = 25°C Power Dissipation Derating TC > 25°C W/°C Operating Junction Temperature Range -55 to 150 TSTG Storage Junction Temperature Range -55 to 150 CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: Pulse width limited by maximum junction temperature. Package Marking and Ordering Information Device Marking 40N6S2D Device FGH40N6S2D Package TO-247 Tape Width N/A Quantity 30 Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCES ICES IGES Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0 Collector to Emitter Leakage Current VCE = 600V TJ = 25°C TJ = 125°C Gate to Emitter Leakage Current VGE = ± 20V ±250 nA On State Characteristics VCE SAT Collector to Emitter Saturation Voltage VEC Diode Forward Voltage IC = 20A, VGE = 15V IEC = 20A TJ = 25°C TJ = 125°C Dynamic Characteristics QG ON Gate Charge VGE TH Gate to Emitter Threshold Voltage VGEP Gate to Emitter Plateau Voltage IC = 20A, VCE = 300V VGE = 15V VGE = 20V IC = 250µA, VCE = VGE IC = 20A, VCE = 300V Switching Characteristics SSOA Switching SOA td ON I trI td OFF I tfI EON1 EON2 EOFF td ON I trI td OFF I tfI EON1 EON2 EOFF TJ = 150°C, VGE = 15V, RG = 100 L = 100µH, VCE = 600V IGBT and Diode at TJ = 25°C, ICE = 20A, VCE = 390V, VGE = 15V, RG = L = 200µH |
| More datasheets: FSDM0465RSWDTU | 333-2UYT/S530-A3 | M13042 SL005 | M13042 SL002 | M13042 SL001 | 10639-4-1040 | 10637-4-1040 | 10640-4-1040 | 10638-4-1040 | 18065ACU |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FGH40N6S2D Datasheet file may be downloaded here without warranties.