FGH30N6S2D
FGH30N6S2D Datasheet
FGH30N6S2D / FGP30N6S2D / FGB30N6S2D
| Part | Datasheet |
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FGH30N6S2D |
FGH30N6S2D (pdf) |
| Related Parts | Information |
|---|---|
FGB30N6S2D |
FGB30N6S2D |
FGH30N6S2 |
FGH30N6S2 |
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FGP30N6S2D |
FGP30N6S2D |
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FGB30N6S2DT |
FGB30N6S2DT |
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| FGH30N6S2D / FGP30N6S2D / FGB30N6S2D July 2001 FGH30N6S2D / FGP30N6S2D / FGB30N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability UIS . These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: • Power Factor Correction PFC circuits • Full bridge topologies • Half bridge topologies • Push-Pull circuits • Uninterruptible power supplies • Zero voltage and zero current switching circuits IGBT formerly Developmental Type TA49336 Diode formerly Developmental Type TA49390 Features • 100kHz Operation at 390V, 14A • 200kHZ Operation at 390V, 9A • 600V Switching SOA Capability • Typical Fall Time. 90ns at TJ = 125oC • Low Gate Charge 23nC at VGE = 15V • Low Plateau Voltage .6.5V Typical • UIS Rated 150mJ • Low Conduction Loss Package JEDEC STYLE TO-247 JEDEC STYLE TO-220AB JEDEC STYLE TO-263AB Device Maximum Ratings TC= 25°C unless otherwise noted Parameter Ratings Units BVCES Collector to Emitter Breakdown Voltage IC25 Collector Current Continuous, TC = 25°C IC110 Collector Current Continuous, TC = 110°C Collector Current Pulsed Note 1 VGES Gate to Emitter Voltage Continuous ±20 VGEM Gate to Emitter Voltage Pulsed ±30 SSOA Switching Safe Operating Area at TJ = 150°C, Figure 2 60A at 600V Pulsed Avalanche Energy, ICE = 12A, L = 2mH, VDD = 50V Power Dissipation Total TC = 25°C Power Dissipation Derating TC > 25°C W/°C Operating Junction Temperature Range -55 to 150 TSTG Storage Junction Temperature Range -55 to 150 CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: Pulse width limited by maximum junction temperature. 2001 Fairchild Semiconductor Corporation Package Marking and Ordering Information Device Marking 30N6S2D Device FGB30N6S2D FGP30N6S2D FGH30N6S2D Package TO-263AB TO-220AB TO-247 Tape Width 24mm - Quantity 800 - Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCES Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0 ICES Collector to Emitter Leakage Current VCE = 600V TJ = 25°C TJ = 125°C - IGES Gate to Emitter Leakage Current VGE = ± 20V ±250 nA On State Characteristics VCE SAT Collector to Emitter Saturation Voltage IC = 12A, TJ = 25°C VGE = 15V TJ = 125°C Diode Forward Voltage IEC = 12A Dynamic Characteristics QG ON Gate Charge VGE TH Gate to Emitter Threshold Voltage VGEP Gate to Emitter Plateau Voltage IC = 12A, VGE = 15V VCE = 300V VGE = 20V IC = 250µA, VCE = 600V IC = 12A, VCE = 300V Switching Characteristics SSOA Switching SOA td ON I trI td OFF I tfI EON1 EON2 EOFF td ON I trI td OFF I tfI EON1 EON2 EOFF TJ = 150°C, RG = VGE = 60 |
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