FGD2N40L
FGD2N40L Datasheet
FGD2N40L 400V N-Channel Logic Level IGBT
| Part | Datasheet |
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FGD2N40L |
FGD2N40L (pdf) |
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| FGD2N40L 400V N-Channel Logic Level IGBT March 2006 FGD2N40L 400V N-Channel Logic Level IGBT - VCE SAT = 1.6V IC = 2.5A, VGE = 2.4V - 6kV ESD Protected - High Peak Current Density - TO-252 D-Pak - Low VGE TH This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for small engine ignition applications. The gate is ESD protected with a zener diode. - Small Engine Ignition Applications 2006 Fairchild Semiconductor Corporation FGD2N40L 400V N-Channel Logic Level IGBT Device Maximum Ratings TA= 25°C unless otherwise noted BVCES IC ICP VGES VGEP PD TJ TSTG ESD Parameter Collector to Emitter Breakdown Voltage Collector Current Continuous DC Collector Current Pulsed 100µs Gate to Emitter Voltage Continuous DC Gate to Emitter Voltage Pulsed Power Dissipation Total TC = 25oC Operating Junction Temperature Range Storage Junction Temperature Range Electrostatic Discharge Voltage at 100pF, Package Marking and Ordering Information Device Marking FGD2N40 Device FGD2N40L Package D-PAK Ratings 400 7 29 ±8 ±10 29 -40 to 150 -40 to 150 Units V A V W °C °C kV Tape Width 12mm / 16mm Quantity 2500 Electrical Characteristics TA = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVCES BVGES ICES IGES Collector to Emitter Breakdown Voltage IC = 1mA, VGE = 0V Gate-Emitter Breakdown Voltage Collector to Emitter leakage Current IGES = ±1mA ±10 VCE = 320V TC = +25oC TC = +125oC Gate-Emitter Leakage Current VGE = ±8 On Characteristics VCE SAT Collector to Emitter Saturation Voltage IC = 2.5A, VGE = 2.4V NOTE1 Dynamic Characteristics QG ON VGEP VGE TH CIES RG Gate Charge Gate to Emitter Plateau Voltage Gate to Emitter Threshold Voltage Input Capacitance Internal Gate Series Resistance IC = 2.5A, VCE = 300V, VGE = 10V IC = 2.5A, VCE = 300V IC = 1.0mA, VCE = VGE VCE = 10V, VGE = 0V, f =1MHz Switching Characteristics tON td ON I trI tOFF td OFF I tfI Turn-On Time Current Turn-On Delay Time Current Rise Time Turn-Off Time Current Turn-Off Delay Time Current Fall Time VCC = 300V, IC = 2.5A, VGE = 4V, RL = RG = TJ = 25oC Thermal Characteristics Thermal Resistance Junction-Case |
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