FGA70N33BTDTU
FGA70N33BTDTU Datasheet
FGA70N33BTD 330V, 70A PDP IGBT
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FGA70N33BTDTU |
FGA70N33BTDTU (pdf) |
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| FGA70N33BTD 330V, 70A PDP IGBT FGA70N33BTD 330V, 70A PDP IGBT • High current capability • Low saturation voltage VCE sat =1.7V IC = 70A • High input impedance • Fast switching • RoHS Compliant • PDP System August 2011 Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. TO-3P Absolute Maximum Ratings TC = 25°C unless otherwise noted VCES VGES ICpulse 1 * IC pulse 2 * VRRM IF AV IFSM Collector to Emitter Voltage Gate to Emitter Voltage Pulsed Collector Current TC = 25oC Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation TC = 25oC TC = 25oC TC = 100oC Average Rectified Forward Current of diode TC = 100oC Non-repetitive Peak Surge Current of diode 60Hz Single Half-Sine wave TJ, Tstg TL Operating Junction Temperature and Storage Temperrature Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Notes 1 Repetitive test , Pulse width=100usec , Duty=0.1 2 Half Sine Wave, D< pluse width < 5usec *IC_pulse limited by max Tj 2011 Fairchild Semiconductor Corporation Ratings 330 ± 30 160 220 149 60 330 10 100 -55 to +150 300 Typ. ---- Max. Units V A W V A oC Units oC/W oC/W oC/W FGA70N33BTD 330V, 70A PDP IGBT Package Marking and Ordering Information Device Marking Device FGA70N33BTD FGA70N33BTDTU Package TO-3P Packaging Type Tube Qty per Tube 30ea Max Qty per Box Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250uA ICES IGES Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V V/oC ±400 On Characteristics VGE th G-E Threshold Voltage IC = 250uA, VCE = VGE IC = 20A, VGE = 15V VCE sat Collector to Emitter Saturation Voltage IC = 40A, VGE = 15V, IC = 70A, VGE = 15V, TC = 25oC IC = 70A, VGE = 15V, TC = 125oC Dynamic Characteristics Cies Coes Cres VCE = 30V, VGE = 0V, f = 1MHz 1380 Switching Characteristics |
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