FDMS3616S

FDMS3616S Datasheet


FDMS3616S Power Stage

Part Datasheet
FDMS3616S FDMS3616S FDMS3616S (pdf)
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FDMS3616S Power Stage

FDMS3616S

Power Stage

Asymmetric Dual N-Channel MOSFET

Q1 N-Channel - Max rDS on = mΩ at VGS = 10 V, ID = 16 A - Max rDS on = mΩ at VGS = V, ID = 13 A Q2 N-Channel - Max rDS on = mΩ at VGS = 10 V, ID = 18 A - Max rDS on = mΩ at VGS = V, ID = 15 A - Low inductance packaging shortens rise/fall times, resulting in
lower switching losses - MOSFET integration enables optimum layout for lower circuit
inductance and reduced switch node ringing - RoHS Compliant

June 2011

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET Q1 and synchronous SyncFET Q2 have been designed to provide optimal power efficiency.
- Computing - Communications - General Purpose Point of Load - Notebook VCORE

Pin 1

G1 D1

PHASE S1/D2

G2S2 S2

Power 56

Bottom

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

Symbol VDS VGS

EAS PD TJ, TSTG

Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous Package limited
-Continuous Silicon limited -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation for Single Operation Power Dissipation for Single Operation Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information

S2 5 S2 6 S2 7 G2 8

PHASE
3 D1 2 D1

Note 3 TC = 25 °C TC = 25 °C TA = 25 °C

TA = 25°C TA = 25°C
±20
±20
89 161a
88 181b
45 384 2.31a 1.01c
36 985 2.31b 1.01d
-55 to +150

Units V
mJ W °C
551a 1251c
551b 1251d
°C/W

Device Marking

Y8OA K10OC

Device FDMS3616S

Package Power 56

Reel Size 13 ”

Tape Width 12 mm

Quantity 3000 units
2011 Fairchild Semiconductor Corporation

FDMS3616S Power Stage

Electrical Characteristics TJ = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

ID = 250 uA, VGS = 0 V ID = 1 mA, VGS = 0 V

ID = 250 uA, referenced to 25°C ID = 10 mA, referenced to 25°C

IDSS

Zero Gate Voltage Drain Current

VDS = 20 V, VGS = 0 V

IGSS

Gate to Source Leakage Current
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Datasheet ID: FDMS3616S 514219