FDMS3616S

FDMS3616S Datasheet

FDMS3616S Power Stage

Part	Datasheet
FDMS3616S	FDMS3616S (pdf)

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FDMS3616S Power Stage FDMS3616S Power Stage Asymmetric Dual N-Channel MOSFET Q1 N-Channel - Max rDS on = mΩ at VGS = 10 V, ID = 16 A - Max rDS on = mΩ at VGS = V, ID = 13 A Q2 N-Channel - Max rDS on = mΩ at VGS = 10 V, ID = 18 A - Max rDS on = mΩ at VGS = V, ID = 15 A - Low inductance packaging shortens rise/fall times, resulting in lower switching losses - MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing - RoHS Compliant June 2011 This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET Q1 and synchronous SyncFET Q2 have been designed to provide optimal power efficiency. - Computing - Communications - General Purpose Point of Load - Notebook VCORE Pin 1 G1 D1 PHASE S1/D2 G2S2 S2 Power 56 Bottom MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous Package limited -Continuous Silicon limited -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation for Single Operation Power Dissipation for Single Operation Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information S2 5 S2 6 S2 7 G2 8 PHASE 3 D1 2 D1 Note 3 TC = 25 °C TC = 25 °C TA = 25 °C TA = 25°C TA = 25°C ±20 ±20 89 161a 88 181b 45 384 2.31a 1.01c 36 985 2.31b 1.01d -55 to +150 Units V mJ W °C 551a 1251c 551b 1251d °C/W Device Marking Y8OA K10OC Device FDMS3616S Package Power 56 Reel Size 13 ” Tape Width 12 mm Quantity 3000 units 2011 Fairchild Semiconductor Corporation FDMS3616S Power Stage Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250 uA, VGS = 0 V ID = 1 mA, VGS = 0 V ID = 250 uA, referenced to 25°C ID = 10 mA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V IGSS Gate to Source Leakage Current

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FDMS3616S Power Stage

FDMS3616S

Power Stage

Asymmetric Dual N-Channel MOSFET

Q1 N-Channel - Max rDS on = mΩ at VGS = 10 V, ID = 16 A - Max rDS on = mΩ at VGS = V, ID = 13 A Q2 N-Channel - Max rDS on = mΩ at VGS = 10 V, ID = 18 A - Max rDS on = mΩ at VGS = V, ID = 15 A - Low inductance packaging shortens rise/fall times, resulting in
lower switching losses - MOSFET integration enables optimum layout for lower circuit
inductance and reduced switch node ringing - RoHS Compliant

June 2011

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET Q1 and synchronous SyncFET Q2 have been designed to provide optimal power efficiency.
- Computing - Communications - General Purpose Point of Load - Notebook VCORE

Pin 1

G1 D1

PHASE S1/D2

G2S2 S2

Power 56

Bottom

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

Symbol VDS VGS

EAS PD TJ, TSTG

Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous Package limited
-Continuous Silicon limited -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation for Single Operation Power Dissipation for Single Operation Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information

S2 5 S2 6 S2 7 G2 8

PHASE
3 D1 2 D1

Note 3 TC = 25 °C TC = 25 °C TA = 25 °C

TA = 25°C TA = 25°C
±20
±20
89 161a
88 181b
45 384 2.31a 1.01c
36 985 2.31b 1.01d
-55 to +150

Units V
mJ W °C
551a 1251c
551b 1251d
°C/W

Device Marking

Y8OA K10OC

Device FDMS3616S

Package Power 56

Reel Size 13 ”

Tape Width 12 mm

Quantity 3000 units
2011 Fairchild Semiconductor Corporation

FDMS3616S Power Stage

Electrical Characteristics TJ = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

ID = 250 uA, VGS = 0 V ID = 1 mA, VGS = 0 V

ID = 250 uA, referenced to 25°C ID = 10 mA, referenced to 25°C

IDSS

Zero Gate Voltage Drain Current

VDS = 20 V, VGS = 0 V

IGSS

Gate to Source Leakage Current

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Datasheet ID: FDMS3616S 514219