FGA180N30DTU

FGA180N30DTU Datasheet


FGA180N30D 300V PDP IGBT

Part Datasheet
FGA180N30DTU FGA180N30DTU FGA180N30DTU (pdf)
PDF Datasheet Preview
FGA180N30D 300V PDP IGBT

June 2006

FGA180N30D
300V PDP IGBT
• High Current Capability
• Low saturation voltage VCE sat , Typ = IC = 40A
• High Input Impedance

Employing Unified IGBT Technology, FGA180N30D provides low conduction and switching loss. FGA180N30D offers the optimum solution for PDP applications where low condution loss is essential.

TO-3PN

Absolute Maximum Rating TC = 25oC unless otherwise noted

VCES VGES IC ICM IF IFM PD

TJ Tstg TL

Collector-Emitter Voltage

Gate-Emitter Voltage

Collector Current Pulsed Collector Current Note 1 Diode Continuous Forward Current Diode Maximum Forward Current

TC = 25°C TC = 25°C TC = 100°C

Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature

TC = 25°C TC = 100°C

Storage Temperature Range

Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds
1 Repetitive test , pulse width = 100usec , Duty =
* Ic_pulse limited by max Tj

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case for IGBT Thermal Resistance, Junction-to-Case for Diode Thermal Resistance, Junction-to-Ambient

FGA180N30D
300 ± 30 180 450 10 40 480 192 -55 to +150 300

Units

V A W °C °C °C

Typ.
----

Max.

Units
°C/W °C/W °C/W
2006 Fairchild Semiconductor Corporation

FGA180N30D 300V PDP IGBT
Package Marking and Ordering Information

Device Marking

FGA180N30D

Device

FGA180N30D

Package

TO-3PN

Reel Size

Tape Width

Quantity

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Parameter

Test Conditions

Min.

Typ.

Max. Units

Off Characteristics

BVCES

Collector-Emitter Breakdown Voltage

ICES

IGES

Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current

G-E Leakage Current

On Characteristics

VGE th

G-E Threshold Voltage

VCE sat

Collector to Emitter Saturation Voltage

Dynamic Characteristics

Cies Coes Cres

Switching Characteristics
td on tr td off tf Eon Eoff Ets td on tr td off tf Eon Eoff Ets Qg Qge Qgc

Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge

VGE = 0V, IC = 250µA VGE = 0V, IC = 250µA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V

IC = 250uA, VCE = VGE IC = 40A, VGE = 15V IC = 180A, VGE = 15V, TC = 25°C IC = 180A, VGE = 15V, TC = 125°C

VCE = 30V, VGE = 0V, f = 1MHz

VCC = 200V, IC = 40A, RG = VGE = 15V, Resistive Load, TC = 25°C

VCC = 200V, IC = 40A, RG = VGE = 15V, Resistive Load, TC = 125°C

VCE = 200V, IC = 40A, VGE = 15V

V/°C
± 250
More datasheets: FDMJ1032C | ASMT-MW09-NLLZ0 | ASMT-MW09-NLLW0 | ASMT-MW09-NLLS0 | ASMT-MW09-NLL00 | ASMT-MW09-NKL00 | ASMT-MW09-NMM00 | ASMT-MW09-NLM00 | 2060-48A | 3AD5V


Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FGA180N30DTU Datasheet file may be downloaded here without warranties.

Datasheet ID: FGA180N30DTU 514599