FGA180N30DTU
FGA180N30DTU Datasheet
FGA180N30D 300V PDP IGBT
| Part | Datasheet |
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FGA180N30DTU |
FGA180N30DTU (pdf) |
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| FGA180N30D 300V PDP IGBT June 2006 FGA180N30D 300V PDP IGBT • High Current Capability • Low saturation voltage VCE sat , Typ = IC = 40A • High Input Impedance Employing Unified IGBT Technology, FGA180N30D provides low conduction and switching loss. FGA180N30D offers the optimum solution for PDP applications where low condution loss is essential. TO-3PN Absolute Maximum Rating TC = 25oC unless otherwise noted VCES VGES IC ICM IF IFM PD TJ Tstg TL Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Note 1 Diode Continuous Forward Current Diode Maximum Forward Current TC = 25°C TC = 25°C TC = 100°C Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature TC = 25°C TC = 100°C Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 1 Repetitive test , pulse width = 100usec , Duty = * Ic_pulse limited by max Tj Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case for IGBT Thermal Resistance, Junction-to-Case for Diode Thermal Resistance, Junction-to-Ambient FGA180N30D 300 ± 30 180 450 10 40 480 192 -55 to +150 300 Units V A W °C °C °C Typ. ---- Max. Units °C/W °C/W °C/W 2006 Fairchild Semiconductor Corporation FGA180N30D 300V PDP IGBT Package Marking and Ordering Information Device Marking FGA180N30D Device FGA180N30D Package TO-3PN Reel Size Tape Width Quantity Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage ICES IGES Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current On Characteristics VGE th G-E Threshold Voltage VCE sat Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres Switching Characteristics td on tr td off tf Eon Eoff Ets td on tr td off tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VGE = 0V, IC = 250µA VGE = 0V, IC = 250µA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 250uA, VCE = VGE IC = 40A, VGE = 15V IC = 180A, VGE = 15V, TC = 25°C IC = 180A, VGE = 15V, TC = 125°C VCE = 30V, VGE = 0V, f = 1MHz VCC = 200V, IC = 40A, RG = VGE = 15V, Resistive Load, TC = 25°C VCC = 200V, IC = 40A, RG = VGE = 15V, Resistive Load, TC = 125°C VCE = 200V, IC = 40A, VGE = 15V V/°C ± 250 |
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