FDMJ1032C

FDMJ1032C Datasheet

FDMJ1032C Dual N & P-Channel MOSFET

Part	Datasheet
FDMJ1032C	FDMJ1032C (pdf)

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FDMJ1032C Dual N & P-Channel MOSFET FDMJ1032C Dual N & P-Channel MOSFET N-Channel 20V, 3.2A, P-Channel -20V, -2.5A, September 2007 Q1 N-Channel - Max rDS on = at VGS = 4.5V, ID = 3.2A - Max rDS on = at VGS = 2.5V, ID = 2.5A Q2 P-Channel - Max rDS on = at VGS = -4.5V, ID = -2.5A - Max rDS on = at VGS = -2.5V, ID = -2.0A - Max rDS on = at VGS = -1.8V, ID = -1.0A - Low gate charge, high power and current handling capability This dual N and P-Channel enhancement mode Power MOSFET is produced using Fairchild Semiconductor’s advanced process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Application - Battery management - RoHS Compliant Pin 1 S1 S2 G2 Bottom Drain Contact D1 D2 G1 S1 S2 SC-75 MicroFET S2 4 S1 5 G1 6 3 G2 2 S2 1 S1 Bottom Drain Contact MOSFET Maximum Ratings TA= 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation Operating and Storage Junction Temperature Range TA = 25°C TA = 25°C Note 1a TA = 25°C Note 1b Thermal Characteristics ±12 -55 to +150 Units V A W °C Thermal Resistance, Junction to Ambient, Single Operation Note 1a Thermal Resistance, Junction to Ambient, Single Operation Note 1b Package Marking and Ordering Information °C/W Device Marking 032 Device FDMJ1032C Package SC-75 MicroFET Reel Size 7” Tape Width 8mm Quantity 3000 units 2007 Fairchild Semiconductor Corporation FDMJ1032C Dual N & P-Channel MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Type Min Typ Max Units Off Characteristics BVDSS IDSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = -250µA, VGS = 0V ID = 250µA, referenced to 25°C ID = -250µA, referenced to 25°C VDS = 16V, VGS = 0V VDS = -16V, VGS = 0V VGS = ±12V, VDS = 0V VGS = ±8V, VDS = 0V Q1 20 Q2 -20 Q1 Q2 13 -13 mV/°C Q1 Q2 Q1 Q2 ±100 nA On Characteristics VGS th rDS on Gate to Source Threshold Voltage VGS = VDS, ID = 250µA VGS = VDS, ID = -250µA Q1 Q2 Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C

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FDMJ1032C Dual N & P-Channel MOSFET

FDMJ1032C

Dual N & P-Channel MOSFET

N-Channel 20V, 3.2A, P-Channel -20V, -2.5A,

September 2007

Q1 N-Channel - Max rDS on = at VGS = 4.5V, ID = 3.2A - Max rDS on = at VGS = 2.5V, ID = 2.5A

Q2 P-Channel - Max rDS on = at VGS = -4.5V, ID = -2.5A - Max rDS on = at VGS = -2.5V, ID = -2.0A - Max rDS on = at VGS = -1.8V, ID = -1.0A - Low gate charge, high power and current handling
capability

This dual N and P-Channel enhancement mode Power MOSFET is produced using Fairchild Semiconductor’s advanced process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Application
- Battery management
- RoHS Compliant

Pin 1

S1 S2 G2

Bottom Drain Contact

D1 D2

G1 S1 S2 SC-75 MicroFET

S2 4 S1 5 G1 6
3 G2 2 S2 1 S1

Bottom Drain Contact

MOSFET Maximum Ratings TA= 25°C unless otherwise noted

Symbol VDS VGS ID

PD TJ, TSTG

Parameter Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous
- Pulsed Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range

TA = 25°C

TA = 25°C Note 1a TA = 25°C Note 1b

Thermal Characteristics
±12
-55 to +150

Units V A

W °C

Thermal Resistance, Junction to Ambient, Single Operation

Note 1a

Thermal Resistance, Junction to Ambient, Single Operation

Note 1b
Package Marking and Ordering Information
°C/W

Device Marking 032

Device FDMJ1032C

Package SC-75 MicroFET

Reel Size 7”

Tape Width 8mm

Quantity 3000 units
2007 Fairchild Semiconductor Corporation

FDMJ1032C Dual N & P-Channel MOSFET

Electrical Characteristics TJ = 25°C unless otherwise noted

Parameter

Test Conditions

Type Min Typ Max Units

Off Characteristics

BVDSS

IDSS

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSS

Gate to Source Leakage Current

ID = 250µA, VGS = 0V ID = -250µA, VGS = 0V

ID = 250µA, referenced to 25°C ID = -250µA, referenced to 25°C

VDS = 16V, VGS = 0V VDS = -16V, VGS = 0V

VGS = ±12V, VDS = 0V VGS = ±8V, VDS = 0V

Q1 20 Q2 -20

Q1 Q2
13 -13
mV/°C

Q1 Q2

Q1 Q2
±100 nA

On Characteristics

VGS th
rDS on

Gate to Source Threshold Voltage

VGS = VDS, ID = 250µA VGS = VDS, ID = -250µA

Q1 Q2

Gate to Source Threshold Voltage Temperature Coefficient

ID = 250µA, referenced to 25°C

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Datasheet ID: FDMJ1032C 514210