FGA15N120FTDTU
FGA15N120FTDTU Datasheet
FGA15N20FTD 1200 V, 15 A Field Stop Trench IGBT
| Part | Datasheet |
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FGA15N120FTDTU |
FGA15N120FTDTU (pdf) |
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| FGA15N20FTD 1200 V, 15 A Field Stop Trench IGBT March 2013 FGA15N120FTD 1200 V, 15 A Field Stop Trench IGBT • Field Stop Trench Technology • High Speed Switching • Low Saturation Voltage VCE sat = V IC = 15 A • High Input Impedance • RoHS Complaint • Induction Heating, Microwave Oven Using advanced field stop trench technology, 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche ruggedness. This device is designed for induction heating and microwave oven. TO-3PN Absolute Maximum Ratings VCES VGES IC ICM 1 IF IFM PD TJ Tstg TL Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current TC = 25oC TC = 100oC Diode Continuous Forward Current TC = 100oC Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature TC = 25oC TC = 100oC Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Notes 1 Repetitive rating Pulse width limited by max. junction temperature Thermal Characteristics Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2008 Fairchild Semiconductor Corporation Ratings 1200 25 30 15 45 15 90 220 88 -55 to +150 -55 to +150 300 Unit V A W oC Typ. Max. Unit oC/W oC/W oC/W FGA15N120FTD 1200 V, 15 A Field Stop Trench IGBT Package Marking and Ordering Information Device Marking Device FGA15N120FTD FGA15N120FTDTU Package TO-3PN Reel Size Tape Width Quantity Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA ICES Collector Cut-Off Current VCE = VCES, VGE = 0V IGES G-E Leakage Current VGE = VGES, VCE = 0V On Characteristics VGE th VCE sat G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics IC = 15mA, VCE = VGE IC = 15A, VGE = 15V IC = 15A, VGE = 15V, TC = 125oC Cies Input Capacitance Coes Output Capacitance Cres Switching Characteristics VCE = 30V, VGE = 0V, f = 1MHz td on tr td off tf Eon Eoff Ets td on tr td off tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCC = 600V, IC = 15A, RG = VGE = 15V, Resistive Load, TC = 25oC VCC = 600V, IC = 15A, RG = VGE = 15V, Resistive Load, TC = 125oC VCE = 600V, IC = 15A, VGE = 15V Min. 1200 - Typ. Max. |
| More datasheets: DS1200HE-3-004 | DS1200HE-3-003 | DS1200HE-3 | HLMP1790C6A0 | HLMP4719 | HLMP4700 | HLMP4740 | HLMP1700C6A0 | 19-21/BHC-AP1Q2/3T | E1103 |
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