FGA15N120FTDTU

FGA15N120FTDTU Datasheet


FGA15N20FTD 1200 V, 15 A Field Stop Trench IGBT

Part Datasheet
FGA15N120FTDTU FGA15N120FTDTU FGA15N120FTDTU (pdf)
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FGA15N20FTD 1200 V, 15 A Field Stop Trench IGBT

March 2013

FGA15N120FTD
1200 V, 15 A Field Stop Trench IGBT
• Field Stop Trench Technology
• High Speed Switching
• Low Saturation Voltage VCE sat = V IC = 15 A
• High Input Impedance
• RoHS Complaint
• Induction Heating, Microwave Oven

Using advanced field stop trench technology, 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche ruggedness. This device is designed for induction heating and microwave oven.

TO-3PN

Absolute Maximum Ratings

VCES VGES IC

ICM 1 IF IFM PD

TJ Tstg TL

Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current

TC = 25oC TC = 100oC

Diode Continuous Forward Current

TC = 100oC

Diode Maximum Forward Current

Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature

TC = 25oC TC = 100oC

Storage Temperature Range

Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds

Notes 1 Repetitive rating Pulse width limited by max. junction temperature

Thermal Characteristics

Parameter

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
2008 Fairchild Semiconductor Corporation

Ratings
1200  25 30 15 45 15 90 220 88 -55 to +150 -55 to +150 300

Unit

V A W oC

Typ.

Max.

Unit
oC/W oC/W oC/W

FGA15N120FTD 1200 V, 15 A Field Stop Trench IGBT
Package Marking and Ordering Information

Device Marking

Device

FGA15N120FTD FGA15N120FTDTU

Package

TO-3PN

Reel Size

Tape Width

Quantity

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Parameter

Test Conditions
 Off Characteristics

BVCES

Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA

ICES

Collector Cut-Off Current

VCE = VCES, VGE = 0V

IGES

G-E Leakage Current

VGE = VGES, VCE = 0V
 On Characteristics

VGE th VCE sat

G-E Threshold Voltage Collector to Emitter Saturation Voltage
 Dynamic Characteristics

IC = 15mA, VCE = VGE IC = 15A, VGE = 15V IC = 15A, VGE = 15V, TC = 125oC

Cies

Input Capacitance

Coes

Output Capacitance

Cres
 Switching Characteristics

VCE = 30V, VGE = 0V, f = 1MHz
td on tr td off tf Eon Eoff Ets td on tr td off tf Eon Eoff Ets Qg Qge Qgc

Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge

VCC = 600V, IC = 15A, RG = VGE = 15V, Resistive Load, TC = 25oC

VCC = 600V, IC = 15A, RG = VGE = 15V, Resistive Load, TC = 125oC

VCE = 600V, IC = 15A, VGE = 15V

Min.
1200 -

Typ. Max.
More datasheets: DS1200HE-3-004 | DS1200HE-3-003 | DS1200HE-3 | HLMP1790C6A0 | HLMP4719 | HLMP4700 | HLMP4740 | HLMP1700C6A0 | 19-21/BHC-AP1Q2/3T | E1103


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Datasheet ID: FGA15N120FTDTU 514598