FGA15N120ANDTU

FGA15N120ANDTU Datasheet

FGA15N120AND

Part	Datasheet
FGA15N120ANDTU	FGA15N120ANDTU (pdf)

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FGA15N120AND FGA15N120AND IGBT Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers solutions for applications such as induction heating IH , motor control, general purpose inverters and uninterruptible power supplies UPS . • High speed switching • Low saturation voltage VCE sat = V IC = 15A • High input impedance • CO-PAK, IGBT with FRD trr = 210ns typ. Induction Heating, UPS, AC & DC motor controls and general purpose inverters. TO-3PN Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VCES VGES ICM 1 IF IFM PD TJ Tstg Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds TC = 25°C TC = 100°C TC = 100°C TC = 25°C TC = 100°C Notes 1 Repetitive rating Pulse width limited by max. junction temperature Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FGA15N120AND 1200 ± 20 24 15 45 15 45 200 80 -55 to +150 -55 to +150 Typ. ---- Max. 40 Units V A W °C °C °C Units °C/W °C/W °C/W 2003 Fairchild Semiconductor Corporation FGA15N120AND Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 3mA VGE = 0V, IC = 3mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V On Characteristics VGE th G-E Threshold Voltage VCE sat Collector to Emitter Saturation Voltage

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FGA15N120AND

FGA15N120AND

IGBT

Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers solutions for applications such as induction heating IH , motor control, general purpose inverters and uninterruptible power supplies UPS .
• High speed switching
• Low saturation voltage VCE sat = V IC = 15A
• High input impedance
• CO-PAK, IGBT with FRD trr = 210ns typ.

Induction Heating, UPS, AC & DC motor controls and general purpose inverters.

TO-3PN

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VCES VGES

ICM 1 IF IFM PD

TJ Tstg

Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds

TC = 25°C TC = 100°C

TC = 100°C

TC = 25°C TC = 100°C

Notes 1 Repetitive rating Pulse width limited by max. junction temperature

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

FGA15N120AND 1200 ± 20 24 15 45 15 45 200 80
-55 to +150 -55 to +150

Typ. ----

Max. 40

Units V A W °C °C °C

Units °C/W °C/W °C/W
2003 Fairchild Semiconductor Corporation

FGA15N120AND

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Parameter

Test Conditions

Min. Typ. Max. Units

Off Characteristics

BVCES ICES IGES

Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current

VGE = 0V, IC = 3mA

VGE = 0V, IC = 3mA

VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V

On Characteristics

VGE th

G-E Threshold Voltage

VCE sat

Collector to Emitter Saturation Voltage

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Datasheet ID: FGA15N120ANDTU 514596