FGD3440G2-F085

FGD3440G2-F085 Datasheet

FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085

Part	Datasheet
FGD3440G2-F085	FGD3440G2-F085 (pdf)

Related Parts	Information
FGD3440G2	FGD3440G2

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FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 May 2014 FGB3440G2_F085 / FGD3440G2_F085 FGP3440G2_F085 335mJ, 400V, N-Channel Ignition IGBT - SCIS Energy = 335mJ at TJ = 25oC - Logic Level Gate Drive - Automotive lgnition Coil Driver Circuits - Coil On Plug Applications - Qualified to AEC Q101 - RoHS Compliant Package JEDEC TO-263AB JEDEC TO-220AB EC G JEDEC TO-252AA D-Pak GATE COLLECTOR FLANGE Device Maximum Ratings TA = 25°C unless otherwise noted Parameter BVCER Collector to Emitter Breakdown Voltage IC = 1mA ESCIS25 Self Clamping Inductive Switching Energy Note 1 ESCIS150 Self Clamping Inductive Switching Energy Note 2 IC25 Collector Current Continuous, at VGE = 4.0V, TC = 25°C IC110 Collector Current Continuous, at VGE = 4.0V, TC = 110°C VGEM Gate to Emitter Voltage Continuous Power Dissipation Total, at TC = 25°C Power Dissipation Derating, for TC > 25oC Operating Junction Temperature Range TSTG Storage Junction Temperature Range Max. Lead Temp. for Soldering Leads at 1.6mm from case for 10s TPKG Max. Lead Temp. for Soldering Package Body for 10s ESD Electrostatic Discharge Voltage at100pF, 1500Ω Fairchild Semiconductor Corporation COLLECTOR R1 R2 EMITTER Ratings 400 28 335 195 25 ±10 166 -40 to +175 -40 to +175 300 260 Units V mJ A V W W/oC kV FFGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Package Marking and Ordering Information Device Marking FGB3440G2 FGD3440G2 FGP3440G2 Device FGB3440G2_F085 FGD3440G2_F085 FGP3440G2_F085 Package TO-263AB TO-252AA TO-220AB Reel Size 330mm Tube Tape Width 24mm 16mm N/A Quantity 800 2500 50 Electrical Characteristics TA = 25°C unless otherwise noted Parameter Test Conditions Off State Characteristics BVCER BVCES BVECS BVGES ICER ICE = 2mA, VGE = 0, Collector to Emitter Breakdown Voltage RGE = 1KΩ, TJ = -40 to 150oC ICE = 10mA, VGE = 0V, Collector to Emitter Breakdown Voltage RGE = 0, TJ = -40 to 150oC Emitter to Collector Breakdown Voltage ICE = -20mA, VGE = 0V, TJ = 25°C Gate to Emitter Breakdown Voltage IGES = ±2mA Collector to Emitter Leakage Current VCE = 250V, IECS Emitter to Collector Leakage Current VEC = 24V, Series Gate Resistance Gate to Emitter Resistance On State Characteristics VCE SAT Collector to Emitter Saturation Voltage VCE SAT Collector to Emitter Saturation Voltage VCE SAT Collector to Emitter Saturation Voltage ESCIS Self Clamped Inductive Switching ICE = 6A, VGE = 4V, ICE = 10A, VGE = 4.5V, ICE = 15A, VGE = 4.5V, L = mHy, VGE = 5V RG = Note 1 TJ = 25oC TJ = 150oC TJ = 25oC TJ = 150oC TJ = 25oC TJ = 150oC TJ = 150oC TJ = 25oC Min Typ Max Units 370 400 430 V 390 420 450 V ±12 ±14 - - 25 uA - 120 - Ω 10K - 30K Ω - V - V - V - 335 mJ 1 Self TJ=25

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FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085

May 2014

FGB3440G2_F085 / FGD3440G2_F085 FGP3440G2_F085
335mJ, 400V, N-Channel Ignition IGBT
- SCIS Energy = 335mJ at TJ = 25oC - Logic Level Gate Drive
- Automotive lgnition Coil Driver Circuits
- Coil On Plug Applications
- Qualified to AEC Q101
- RoHS Compliant

Package

JEDEC TO-263AB

JEDEC TO-220AB EC G

JEDEC TO-252AA D-Pak

GATE

COLLECTOR

FLANGE

Device Maximum Ratings TA = 25°C unless otherwise noted

Parameter

BVCER Collector to Emitter Breakdown Voltage IC = 1mA

ESCIS25 Self Clamping Inductive Switching Energy Note 1

ESCIS150 Self Clamping Inductive Switching Energy Note 2

IC25

Collector Current Continuous, at VGE = 4.0V, TC = 25°C

IC110 Collector Current Continuous, at VGE = 4.0V, TC = 110°C

VGEM Gate to Emitter Voltage Continuous

Power Dissipation Total, at TC = 25°C Power Dissipation Derating, for TC > 25oC

Operating Junction Temperature Range

TSTG Storage Junction Temperature Range

Max. Lead Temp. for Soldering Leads at 1.6mm from case for 10s

TPKG Max. Lead Temp. for Soldering Package Body for 10s

ESD Electrostatic Discharge Voltage at100pF, 1500Ω

Fairchild Semiconductor Corporation

COLLECTOR R1 R2

EMITTER

Ratings 400 28 335 195 25 ±10 166
-40 to +175 -40 to +175
300 260

Units V mJ A V W

W/oC kV

FFGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085
Package Marking and Ordering Information

Device Marking FGB3440G2 FGD3440G2 FGP3440G2

Device FGB3440G2_F085 FGD3440G2_F085 FGP3440G2_F085

Package TO-263AB TO-252AA TO-220AB

Reel Size 330mm Tube

Tape Width 24mm 16mm N/A

Quantity 800 2500 50

Electrical Characteristics TA = 25°C unless otherwise noted

Parameter

Test Conditions

Off State Characteristics

BVCER

BVCES BVECS BVGES ICER

ICE = 2mA, VGE = 0, Collector to Emitter Breakdown Voltage RGE = 1KΩ,

TJ = -40 to 150oC

ICE = 10mA, VGE = 0V, Collector to Emitter Breakdown Voltage RGE = 0,

TJ = -40 to 150oC

Emitter to Collector Breakdown Voltage

ICE = -20mA, VGE = 0V, TJ = 25°C

Gate to Emitter Breakdown Voltage IGES = ±2mA

Collector to Emitter Leakage Current VCE = 250V,

IECS

Emitter to Collector Leakage Current VEC = 24V,

Series Gate Resistance

Gate to Emitter Resistance

On State Characteristics

VCE SAT Collector to Emitter Saturation Voltage VCE SAT Collector to Emitter Saturation Voltage VCE SAT Collector to Emitter Saturation Voltage

ESCIS Self Clamped Inductive Switching

ICE = 6A, VGE = 4V, ICE = 10A, VGE = 4.5V, ICE = 15A, VGE = 4.5V, L = mHy, VGE = 5V RG = Note 1

TJ = 25oC TJ = 150oC TJ = 25oC TJ = 150oC

TJ = 25oC TJ = 150oC TJ = 150oC TJ = 25oC

Min Typ Max Units
370 400 430 V
390 420 450 V
±12 ±14 -
- 25 uA
- 120 - Ω
10K - 30K Ω
- V - V - V
- 335 mJ
1 Self TJ=25

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Datasheet ID: FGD3440G2-F085 514593