FFP04S60S
Part | Datasheet |
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FFP04S60STU | FFP04S60STU (pdf) |
PDF Datasheet Preview |
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FFP04S60S FFP04S60S • General Purpose • Switching Mode Power Supply • Boost Diode in continuous mode power factor corrections • Power switching circuits October 2007 STEALTHTM II Rectifier 4A, 600V STEALTHTM II Rectifier The FFP04S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. TO-220-2L Cathode Anode Cathode Anode Absolute Maximum Ratings TC = 25oC unless otherwise noted Symbol VRRM VRWM VR IF AV IFSM Parameter DC Blocking Voltage Average Rectified Forward Current Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave TC = 127oC TJ, TSTG Operating and Storage Temperature Range Thermal Characteristics Parameter Maximum Thermal Resistance, Junction to Case Package Marking and Ordering Information Device Marking Device Package F04S60S FFP04S60STU TO-220-2L Reel Size Ratings 600 4 -65 to +150 Units V A Ratings Units oC/W Tape Width Quantity 2007 Fairchild Semiconductor Corporation FFP04S60S Electrical Characteristics TC = 25oC unless otherwise noted Parameter VFM1 IF = 4A IF = 4A IRM1 VR = 600V VR = 600V IF = 1A, di/dt = 100A/µs, VR = 30V trr Irr S factor IF = 4A, di/dt = 200A/µs, VR = 390V trr Irr S factor IF = 4A, di/dt = 200A/µs, VR = 390V WAVL Avalanche Energy L = 40mH Notes 1 Pulse Test Pulse width = 300µs, Duty Cycle = 2% TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 25oC TC = 125oC Test Circuit and Waveforms Min. Typ. Max. Units 100 500 Typical Performance Characteristics Figure Typical Forward Voltage Drop vs. Forward Current |
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